RFD3N08LSM INTERSIL [Intersil Corporation], RFD3N08LSM Datasheet

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RFD3N08LSM

Manufacturer Part Number
RFD3N08LSM
Description
3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RFD3N08LSM9A
Manufacturer:
AVAGO
Quantity:
6 775
3A, 80V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFD3N08L and RFD3N08LSM are N-Channel
enhancement mode silicon gate power field effect transistors
specifically designed for use with logic level (5V) driving
sources in applications such as programmable controllers,
automotive switching, and solenoid drivers. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09922.
Ordering Information
NOTE: When ordering, include the entire part number. Add the suffix 9A
to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A
Packaging
RFD3N08L
RFD3N08LSM
PART NUMBER
(FLANGE)
DRAIN
JEDEC TO-251AA
TO-251AA
TO-252AA
6-26
PACKAGE
Data Sheet
SOURCE
F3N08L
F3N08L
DRAIN
GATE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
BRAND
http://www.intersil.com or 407-727-9207
Features
• 3A, 80V
• r
• Temperature Compensating PSPICE
• On Resistance vs Gate Drive Voltage Curves
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175
• Related Literature
Symbol
- TB334 “Guidelines for Soldering Surface Mount
DS(ON)
Components to PC Boards”
o
C Operating Temperature
RFD3N08L, RFD3N08LSM
= 0.800
PSPICE® is a registered trademark of MicroSim Corporation.
GATE
July 1999
SOURCE
JEDEC TO-252AA
G
|
Copyright
File Number 2836.4
D
S
DRAIN
(FLANGE)
©
®
Intersil Corporation 1999
Model

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RFD3N08LSM Summary of contents

Page 1

... Formerly developmental type TA09922. Ordering Information PART NUMBER PACKAGE RFD3N08L TO-251AA RFD3N08LSM TO-252AA NOTE: When ordering, include the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. RFD3N08LSM9A Packaging JEDEC TO-251AA DRAIN (FLANGE) 6-26 Features • 3A, 80V • r DS(ON) • ...

Page 2

... Reverse Recovery Time NOTES: 2. Pulsed: pulse duration = 300 s max, duty cycle = 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. Refer to Intersil Application Notes AN9321 and AN9322. 6-27 RFD3N08L, RFD3N08LSM Unless Otherwise Specified DGR DM ...

Page 3

... DSS AREA MAY LIMITED BY r DS(ON MAX RATED J 0 DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 6-28 RFD3N08L, RFD3N08LSM Unless Otherwise Specified 3.5 3.0 2.5 2.0 1.5 1.0 0.5 125 175 150 o C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION (s) ...

Page 4

... FIGURE 8. TRANSFER CHARACTERISTICS 3 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2 5V 1.5 1 0.5 0 -80 - JUNCTION TEMPERATURE ( J FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 6-29 RFD3N08L, RFD3N08LSM Unless Otherwise Specified (Continued +1] 8 DSS 0.1 1 2.5 o -55 C 1.5 o ...

Page 5

... FIGURE 14. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT 6-30 RFD3N08L, RFD3N08LSM Unless Otherwise Specified (Continued) 100 120 160 200 o C) FIGURE 13. SWITCHING TIME vs GATE RESISTANCE 80 V ...

Page 6

... Test Circuits and Waveforms FIGURE 18. SWITCHING TIME TEST CIRCUIT g(REF) FIGURE 20. GATE CHARGE TEST CIRCUIT 6-31 RFD3N08L, RFD3N08LSM (Continued DUT V GS 10% 0 FIGURE 19. RESISTIVE SWITCHING WAVEFORMS DUT G(REF ...

Page 7

... S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.60 VOFF= 4.4) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.4 VOFF= -0.60) .ENDS NOTE: 1. For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991. 6-32 RFD3N08L, RFD3N08LSM DPLCAP 10 RSCL2 6 ESG 8 ...

Page 8

... For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 6-33 RFD3N08L, RFD3N08LSM EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd ...

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