RFD3N08LSM INTERSIL [Intersil Corporation], RFD3N08LSM Datasheet - Page 7

• Manufacturer Part Number: RFD3N08LSM
• Description: 3A, 80V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs
• Manufacturer: INTERSIL [Intersil Corporation]

PSPICE Electrical Model
SUBCKT RFD3N08L 2 1 3 ;
CA 12 8 4.10e-10
CB 15 14 3.25e-10
CIN 6 8 1.10e-10
DBODY 7 5 DBDMOD
DBREAK 5 11 DBREAKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 93.57
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTHRESH 6 21 19 8 1
EZTEMPCO 20 6 18 22 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 5.8e-9
LSOURCE 3 7 5.8e-9
MOS1 16 6 8 8 MSTRONG M = 0.80
MOS2 16 21 8 8 MWEAK M = 0.20
RBREAK 17 18 RBREAKMOD 1
RDRAIN 50 16 RDRAINMOD 174.2e-3
RGATE 9 20 24.9
RIN 6 8 1e9
RLDRAIN 2 5 10
RLGATE 1 9 58
RLSOURCE 3 7 58
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RSOURCEMOD 200.2e-3
RTHRESH 22 8 RTHRESHMOD 1
RZTEMPCO 18 19 RZTEMPCOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 22 19 DC 1
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*10),6))}
.MODEL DBDMOD D (IS = 9.90e-14 RS = 6.00e-2 TRS1 = 1.42e-3 TRS2 = -3.58e-6 CJO = 1.40e-10 TT = 5.75e-8 M = 0.4)
.MODEL DBREAKMOD D (RS = 2.32 TRS1 = 1.03e-3 TRS2 = -6.17e-11)
.MODEL DPLCAPMOD D (CJO = 1.13e-10 IS = 1e-30 N = 10 M=0.6)
.MODEL MSTRONG NMOS (VTO = 1.773 KP = 1.70 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u)
.MODEL MWEAK NMOS (VTO = 1.496 KP = 2.09 IS = 1e-30 N = 10 TOX = 1L = 1u W = 1u)
.MODEL RBREAKMOD RES (TC1 = 8.19e-4 TC2 = 5.9e-7)
.MODEL RDRAINMOD RES (TC1 = 1.55e-2 TC2 = 8.58e-5)
.MODEL RDSOURCEMOD RES (TC1 = 0 TC2 = 0)
.MODEL RSCLMOD RES (TC1 = 0 TC2 = 0)
.MODEL RTHRESHMOD RES (TC1 = -5.0e-4 TC2 = -6.0e-6)
.MODEL RZTEMPCOMOD RES (TC1 = -1.19e-3 TC2 = 1.12e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.2 VOFF= -3.2)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.2 VOFF= -5.2)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.60 VOFF= 4.4)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.4 VOFF= -0.60)
.ENDS
NOTE:
1. For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature Options; IEEE
Power Electronics Specialist Conference Records, 1991.
6-32
rev 5/10/95
GATE
1
RLGATE
LGATE
RFD3N08L, RFD3N08LSM
9
RGATE
EZTEMPCO
20
12
+
S1A
S1B
CA
ESG
22
18
EGS
13
8
10
+
6
8
+
RIN
14
13
6
8
RSCL2
6
13
EVTHRESH
S2A
DPLCAP
S2B
+
15
EDS
19
8
CB
CIN
16
+
5
8
51
5
5
14
+
MOS1
50
RDRAIN
RSCL1
51
ESCL
21
8
EBREAK
RSOURCE
DBREAK
MOS2
17
11
18
17
+
RZTEMPCO
7
RBREAK
IT
RTHRESH
RLSOURCE
RLDRAIN
LSOURCE
LDRAIN
DBODY
18
22
19
+
SOURCE
DRAIN
VBAT
3
2