MTD20P03 MOTOROLA [Motorola, Inc], MTD20P03 Datasheet - Page 2

• Manufacturer Part Number: MTD20P03
• Description: TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM
• Manufacturer: MOTOROLA [Motorola, Inc]

(1) Pulse Test: Pulse Width 300 s, Duty Cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. C pk = Absolute Value of Spec (Spec–AVG/3.516 A).
MTD20P03HDL
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
2
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Drain–to–Source On–Voltage (V GS = 5.0 Vdc)
Forward Transconductance
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V GS = 0 Vdc, I D = 250 Adc)
Temperature Coefficient (Positive)
(V DS = 30 Vdc, V GS = 0 Vdc)
(V DS = 30 Vdc, V GS = 0 Vdc, T J = 125 C)
(V GS = 15 Vdc, V DS = 0 Vdc)
(V DS = V GS , I D = 250 Adc)
Threshold Temperature Coefficient (Negative)
(V GS = 4.0 Vdc, I D = 10 Adc)
(V GS = 5.0 Vdc, I D = 9.5 Adc)
(I D = 19 Adc)
(I D = 9.5 Adc, T J = 125 C)
(V DS = 8.0 Vdc, I D = 9.5 Adc)
(See Figure 8)
(See Figure 8)
(See Figure 15)
(See Figure 15)
(Measured from the drain lead 0.25 from package to center of die)
(Measured from the source lead 0.25 from package to source bond pad)
(C pk
2.0) (3)
Characteristic
(I S = 19 Adc, V GS = 0 Vdc, T J = 125 C)
(T J = 25 C unless otherwise noted)
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DD = 15 Vdc, I D = 19 Adc,
(V DD = 15 Vdc, I D = 19 Adc,
(V DS = 24 Vdc, I D =19 Adc,
(V DS = 24 Vdc, I D =19 Adc,
(V DS = 24 Vdc, I D =19 Adc,
(I S = 19 Adc, V GS = 0 Vdc)
(I S = 19 Adc, V GS = 0 Vdc,
(I S = 19 Adc, V GS = 0 Vdc,
(I S = 19 Adc, V GS = 0 Vdc,
2%.
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
V GS = 5.0 Vdc)
V GS = 5.0 Vdc)
V GS = 5.0 Vdc)
V GS = 5.0 Vdc,
V GS = 5.0 Vdc,
V GS = 5.0 Vdc,
f = 1.0 MHz)
f = 1.0 MHz)
f = 1.0 MHz)
R G = 1.3 )
R G = 1.3 )
R G = 1.3 )
G = 1.3 )
(C pk
(C pk
(C pk
2.0) (3)
2.0) (3)
2.0) (3)
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C iss
C rss
V SD
g FS
Q T
Q 1
Q 2
Q 3
L D
L S
t rr
t a
t b
t r
t f
Min
1.0
5.0
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.209
0.94
2.56
Typ
120
770
360
130
178
1.5
4.0
6.0
3.0
8.2
3.1
4.5
7.5
—
15
—
—
—
90
—
18
21
72
15
11
78
50
28
246.4
1064
Max
25.2
26.6
22.4
100
100
504
182
2.0
2.2
1.9
3.4
10
99
98
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/ C
mV/ C
mhos
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
m
Adc
pF
nC
nH
nH
ns
ns
C