RFP50N05L_04 AUSTIN [Austin Semiconductor], RFP50N05L_04 Datasheet

RFP50N05L_04

Manufacturer Part Number

RFP50N05L_04

Description

50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

Manufacturer

AUSTIN [Austin Semiconductor]

Datasheet

1.RFP50N05L_04.pdf (6 pages)

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50A, 50V, 0.022 Ohm, Logic Level,

N-Channel Power MOSFETs

These are logic-level N-channel power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI

integrated circuits gives optimum utilization of silicon,

resulting in outstanding performance. They were designed

for use with logic-level (5V) driving sources in applications

such as programmable controllers, automotive switching,

switching regulators, switching converters, motor relay

drivers and emitter switches for bipolar transistors. This

performance is accomplished through a special gate oxide

design which provides full rated conductance at gate bias in

the 3V - 5V range, thereby facilitating true on-off power

control directly from integrated circuit supply voltages.

Formerly developmental type TA09872.

Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix 9A to

obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.

Packaging

RFP50N05L

PART NUMBER

DRAIN (FLANGE)

TO-220AB

JEDEC TO-220AB

PACKAGE

Data Sheet

F50N05L

SOURCE

DRAIN

BRAND

GATE

Features

• 50A, 50V

• r

• UIS SOA Rating Curve (Single Pulse)

• Design Optimized for 5V Gate Drive

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Compatible with Automotive Drive Requirements

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

Symbol

- TB334 “Guidelines for Soldering Surface Mount

DS(ON)

Components to PC Boards”

August 2004

= 0.022

RFP50N05L

RFP50N05L Rev. C

Related parts for RFP50N05L_04

RFP50N05L_04 Summary of contents

Page 1

Data Sheet 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting ...

Page 2

Absolute Maximum Ratings T Drain to Source Voltage (Note ...

Page 3

Typical Performance Curves 1.2 1.0 0.8 0.6 0.4 0 CASE TEMPERATURE ( C FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 I MAX CONTINUOUS D DC OPERATION 10 OPERATION IN THIS AREA ...

Page 4

Typical Performance Curves 3.0 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX. 2 50A D 2.0 1.5 1.0 0 JUNCTION TEMPERATURE ( J FIGURE 7. NORMALIZED ...

Page 5

Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 13. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. SWITCHING TIME TEST CIRCUIT V DS ...

Page 6

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ ...

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