MT4C4001JC-10/883C AUSTIN [Austin Semiconductor], MT4C4001JC-10/883C Datasheet

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MT4C4001JC-10/883C

Manufacturer Part Number
MT4C4001JC-10/883C
Description
1 MEG x 4 DRAM Fast Page Mode DRAM
Manufacturer
AUSTIN [Austin Semiconductor]
Datasheet
1 MEG x 4 DRAM
Fast Page Mode DRAM
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-90847
• MIL-STD-883
FEATURES
• Industry standard x4 pinout, timing, functions, and
packages
• High-performance, CMOS silicon-gate process
• Single +5V±10% power supply
• Low-power, 2.5mW standby; 300mW active, typical
• All inputs, outputs, and clocks are fully TTL and CMOS
compatible
• 1,024-cycle refresh distributed across 16ms
• Refresh modes: RAS\-ONLY, CAS\-BEFORE-RAS\
(CBR), and HIDDEN
• FAST PAGE MODE access cycle
• CBR with WE\ a HIGH (JEDEC test mode capable via
WCBR)
OPTIONS
• Timing
• Packages
*NOTE: If solder-dip and lead-attach is desired on LCC
packages, lead-attach must be done prior to the solder-
dip operation.
MT4C4001J
Rev. 1.5 10/02
Ceramic LCC*
Ceramic ZIP
Ceramic SOJ
Ceramic Gull Wing
Ceramic DIP (300 mil)
Ceramic DIP (400 mil)
70ns access
80ns access
100ns access
120ns access
For more products and information
www.austinsemiconductor.com
please visit our web site at
Austin Semiconductor, Inc.
MARKING
-7
-8
-10
-12
CN
C
ECN
CZ
ECJ
ECG
No. 103
No. 104
No. 202
No. 400
No. 504
No. 600
1
GENERAL DESCRIPTION
memory containing 4,194,304 bits organized in a x4
configuration. During READ or WRITE cycles each bit is
uniquely addressed through the 20 address bits which are
entered 10 bits (A0-A9) at a time. RAS\ is used to latch the
first 10 bits and CAS\ the later 10 bits. A READ or WRITE
cycle is selected with the WE\ input. A logic HIGH on WE\
dictates READ mode while a logic LOW on WE\ dictates
WRITE mode. During a WRITE cycle, data-in (D) is latched
by the falling edge of WE\ or CAS\, whichever occurs last. If
WE\ goes LOW prior to CAS\ going LOW, the output pin(s)
remain open (High-Z) until the next CAS\ cycle. If WE\ goes
LOW after data reaches the output pin(s), Qs are activated and
retain the selected cell data as long as CAS\ remains low
(regardless of WE\ or RAS\). This LATE WE\ pulse results in
a READ-WRITE cycle. The four data inputs and four data
outputs are routed through four pins using common I/O and
pin direction is controlled by WE\ and OE\. FAST-PAGE-
MODE operations allow faster data operations (READ,
WRITE, or READ-MODIFY-WRITE) within a row address
(A0-A9) defined page boundary. The FAST PAGE MODE
RAS\
DQ1
DQ2
WE\
Vcc
A9
A0
A1
A2
A3
The MT4C4001J is a randomly accessed solid-state
20-Pin DIP (C, CN)
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
2
3
4
5
6
7
8
9
10
RAS\ 9
DQ3 3
DQ2 7
Vcc 15
OE\ 1
Vss
A0 11
A2 13
A5 17
A7 19
20-Pin DIP (CZ)
20
19
18
17
16
15
14
13
12
11
PIN ASSIGNMENT
5
Vss
DQ4
DQ3
CAS\
OE\
A8
A7
A6
A5
A4
(Top View)
2 CAS\
4 DQ4
6 DQ1
8 WE\
10 A9
12 A1
14 A3
16 A4
18 A6
20 A8
RAS\
DQ1
DQ2
WE\
Vcc
A9
A0
A1
A2
A3
20-Pin Gull Wing (ECG)
20-Pin LCC (ECN), &
20-Pin SOJ (ECJ),
MT4C4001J
2
3
4
5
9
10
11
12
13
1
DRAM
DRAM
DRAM
DRAM
DRAM
(continued)
26
25
24
23
22
18
17
16
15
14
Vss
DQ4
DQ3
CAS\
OE\
A8
A7
A6
A5
A4

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MT4C4001JC-10/883C Summary of contents

Page 1

Austin Semiconductor, Inc. 1 MEG x 4 DRAM Fast Page Mode DRAM AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-90847 • MIL-STD-883 FEATURES • Industry standard x4 pinout, timing, functions, and packages • High-performance, CMOS silicon-gate process • Single +5V±10% power ...

Page 2

Austin Semiconductor, Inc. GENERAL DESCRIPTION (cont.) cycle is always initiated with a row address strobe-in by RAS\ followed by a column address strobed-in by CAS\. CAS\ may be toggled-in by holding RAS\ LOW and strobing-in different column addresses, thus executing ...

Page 3

Austin Semiconductor, Inc. TRUTH TABLE FUNCTION Standby READ EARLY-WRITE READ-WRITE FAST-PAGE-MODE 1st Cycle READ 2nd Cycle FAST-PAGE-MODE 1st Cycle EARLY-WRITE 2nd Cycle FAST-PAGE-MODE 1st Cycle READ-WRITE 2nd Cycle RAS\-ONLY REFRESH READ HIDDEN REFRESH WRITE CAS\-BEFORE-RAS\ REFRESH MT4C4001J Rev. 1.5 10/02 ...

Page 4

Austin Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS* Voltage on Any Pin Relative to Vss.................-1.0V to +7.0V Storage Temperature.......................................-65 Power Dissipation.................................................................1W Short Circuit Output Current...........................................50mA Lead Temperature (soldering 5 seconds).....................+270 ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (NOTES ...

Page 5

Austin Semiconductor, Inc. CAPACITANCE PARAMETER Input Capacitance: A0-A10 Input Capacitance: RAS\, CAS\, WE\, OE\ Input/Output Capacitance: DQ ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTES 10, 11, 12, 13) (-55°C < T PARAMETER Random READ or ...

Page 6

Austin Semiconductor, Inc. ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (NOTES 10, 11, 12, 13) (-55°C < T PARAMETER Write command hold time Write command hold time (referenced to RAS\) Write command pulse width Write command ...

Page 7

Austin Semiconductor, Inc. NOTES: 1. All voltages referenced to Vss. 2. This parameter is sampled, not 100% tested. Capacitance is measured with Vcc=5V, f=1 MHz at less than 50mVrms 25°C ±3°C, Vbias = 2.4V applied to each input ...

Page 8

Austin Semiconductor, Inc. MT4C4001J Rev. 1.5 10/02 READ CYCLE EARLY-WRITE CYCLE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 8 DRAM DRAM DRAM DRAM DRAM MT4C4001J ...

Page 9

Austin Semiconductor, Inc. (LATE-WRITE and READ-MODIFY-WRITE CYCLES) FAST-PAGE-MODE READ CYCLE MT4C4001J Rev. 1.5 10/02 READ-WRITE CYCLE Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 9 DRAM DRAM DRAM DRAM DRAM MT4C4001J ...

Page 10

Austin Semiconductor, Inc. FAST-PAGE-MODE EARLY-WRITE CYCLE FAST-PAGE-MODE READ-WRITE CYCLE (LATE-WRITE and READ-MODIFY-WRITE CYCLES LATE-WRITE cycle FAST READ-MODIFY-WRITE cycle PRWC MT4C4001J Rev. 1.5 10/02 Austin Semiconductor, Inc. reserves the right to change products or specifications without ...

Page 11

Austin Semiconductor, Inc. (ADDR = A0-A9; WE\ = Don’t Care) CAS\-BEFORE-RAS\ REFRESH CYCLE MT4C4001J Rev. 1.5 10/02 RAS\-ONLY REFRESH CYCLE (A0-A9, and OE\ = DON’T CARE) HIDDEN REFRESH CYCLE (WE\ = HIGH, OE\ = LOW) Austin Semiconductor, Inc. reserves the ...

Page 12

Austin Semiconductor, Inc. 4 MEG POWER-UP AND REFRESH CONSTRAINTS The EIA/JEDEC 4 Meg DRAM introduces two potential incompatibilities compared to the previous generation 1 Meg DRAM. The incompatibilities involve refresh and power-up. Understanding these incompatibilities and providing for them will ...

Page 13

Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #103 (Package Designator CN) SMD 5962-90847, Case Outline R D Pin 1 SYMBOL NOTE: These dimensions are per the SMD. ASI's ...

Page 14

Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #104 (Package Designator C) SMD 5962-90847, Case Outline Pin 1 SYMBOL NOTE: These dimensions are per the SMD. ...

Page 15

Austin Semiconductor, Inc. MECHANICAL DEFINITIONS* ASI Case #400 (Package Designator CZ) SMD 5962-90847, Case Outline N SYMBOL NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, ...

Page 16

Austin Semiconductor, Inc. ASI Case #202 (Package Designator ECN) SMD 5962-90847, Case Outline T D SYMBOL NOTE: These dimensions are per the SMD. ASI's package dimensional limits may differ, ...

Page 17

Austin Semiconductor, Inc. MECHANICAL DEFINITION* ASI Case #504 (Package Designator ECJ SYMBOL *All measurements are in inches. MT4C4001J Rev. 1.5 10/ ...

Page 18

Austin Semiconductor, Inc. MECHANICAL DEFINITION* ASI Case #600 (Package Designator ECG) SYMBOL *All measurements are in inches. MT4C4001J Rev. 1.5 10/02 ASI PACKAGE SPECIFICATIONS MIN MAX 0.120 ...

Page 19

... Device Package Speed ns Number Type MT4C4001J ECJ MT4C4001J ECJ MT4C4001J ECJ MT4C4001J ECJ *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing MT4C4001J Rev. 1.5 10/02 EXAMPLE: MT4C4001JC-12/883C Device Process Number -7 /* MT4C4001J -8 /* MT4C4001J -10 /* MT4C4001J -12 /* MT4C4001J EXAMPLE: MT4C4001JECN-10/XT Device Process ...

Page 20

... ASI part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD. MT4C4001J Rev. 1.5 10/02 CROSS REFERENCE* ASI Package Designator C SMD Part # ASI Part # MT4C4001JC-8/883C MT4C4001JC-10/883C MT4C4001JC-12/883C ASI Package Designator ECN SMD Part # ASI Part # MT4C4001JECN-8/883C MT4C4001JECN-10/883C MT4C4001JECN-12/883C Austin Semiconductor, Inc ...

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