PSMN030-60YS_1010 PHILIPS [NXP Semiconductors], PSMN030-60YS_1010 Datasheet - Page 7

• Manufacturer Part Number: PSMN030-60YS_1010
• Description: N-channel LFPAK 60 V 24.7 m? standard level MOSFET
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
Table 6.
PSMN030-60YS
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(pF)
(S)
g
C
1500
1000
fs
500
30
20
10
0
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Input and reverse transfer capacitances as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
5
10
…continued
10
20
15
I
All information provided in this document is subject to legal disclaimers.
D
003aae120
V
003aae121
(A)
GS
(V)
C
C
iss
rss
Rev. 02 — 25 October 2010
Conditions
I
see
I
V
30
20
S
S
GS
= 15 A; V
= 5 A; dI
Figure 17
= 0 V; V
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
S
GS
/dt = -100 A/µs;
DS
Fig 6.
Fig 8.
= 0 V; T
= 30 V
(A)
I
(A)
I
D
D
30
20
10
50
40
30
20
10
0
0
j
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
= 25 °C;
0.5
2
PSMN030-60YS
T
10
j
Min
-
-
-
= 175 °C
1
8
4
Typ
0.87
25
23
1.5
7
© NXP B.V. 2010. All rights reserved.
V
V
T
GS
GS
003aae119
003aae118
j
V
= 25 °C
(V) = 4
DS
(V)
6.5
Max
1.2
-
-
(V)
4.5
5.5
6
5
6
2
Unit
V
ns
nC
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