v54c316162 ETC-unknow, v54c316162 Datasheet - Page 5

• Manufacturer Part Number: v54c316162
• Description: 200/183/166/143 Volt, Refresh Ultra High Performance Sdram Banks 512kbit
• Manufacturer: ETC-unknow

M O S E L V I T E L I C
Address Input for Mode Set (Mode Register Operation)
Power On and Initialization
supplier specific and may be undefined. The
following power on and initialization sequence
guarantees the device is preconditioned to each
users specific needs. Like a conventional DRAM,
the Synchronous DRAM must be powered up and
initialized in a predefined manner. During power on,
all VCC and VCCQ pins must be built up
simultaneously to the specified voltage when the
input signals are held in the “NOP” state. The power
on voltage must not exceed VCC+0.3V on any of
the input pins or VCC supplies. The CLK signal
must be started at the same time. After power on,
an initial pause of 200 s is required followed by a
precharge of both banks using the precharge
command. To prevent data contention on the DQ
bus during power on, it is required that the DQM and
CKE pins be held high during the initial pause
period. Once all banks have been precharged, the
Mode Register Set Command must be issued to
initialize the Mode Register. A minimum of eight
Auto Refresh cycles (CBR) are also required.These
may be done before or after programming the Mode
Register. Failure to follow these steps may lead to
unpredictable start-up modes.
V54C316162V Rev. 2.9 September 2001
The default power on state of the mode register is
CAS Latency
Write Burst Length
A9
A6
0
1
0
0
0
0
1
1
1
Write Burst Length
A5
0
0
1
1
0
1
1
Single Bit
Length
Burst
A10
A4
0
1
0
1
1
0
1
A9
Reserve
Reserve
Reserve
Reserve
Reserve
Latency
A8
Test Mode
A8 A7
2
3
Mode
0
Test
A7
0
Mode Reg
A6
CAS Latency
Mode
Set
A5
A4
5
BT
Burst Type
Burst Length
A3
Programming the Mode Register
mode at the read or write cycle. This register is di-
vided into 4 fields. A Burst Length Field to set the
length of the burst, an Addressing Selection bit to
program the column access sequence in a burst
cycle (interleaved or sequential), a CAS Latency
Field to set the access time at clock cycle and a Op-
eration mode field to differentiate between normal
operation (Burst read and burst Write) and a special
Burst Read and Single Write mode. The mode set
operation must be done before any activate com-
mand after the initial power up. Any content of the
mode register can be altered by re-executing the
mode set command. All banks must be in pre-
charged state and CKE must be high at least one
clock before the mode set operation. After the mode
register is set, a Standby or NOP command is
required. Low signals of RAS, CAS, and WE at the
positive edge of the clock activate the mode set
operation. Address input data at this timing defines
parameters to be set as shown in the previous table.
A2
0
0
0
0
1
1
1
1
A3
The Mode register designates the operation
0
1
A2
Burst Length
A1
0
0
1
1
0
0
1
1
A1
Sequential
Interleave
A0
Type
0
1
0
1
0
1
0
1
A0
Sequential
Full Page
Reserve
Reserve
Reserve
Address Bus (Ax)
Mode Register
1
2
4
8
Length
Interleave
Reserve
Reserve
Reserve
Reserve
1
2
4
8
V54C316162V