k6e0808c1e-c Samsung Semiconductor, Inc., k6e0808c1e-c Datasheet
k6e0808c1e-c
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k6e0808c1e-c Summary of contents
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P Document Title 32Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History Rev .No. History Rev. 0.0 Initial release with Preliminary. Rev. 1.0 Release to Final Data Sheet. Rev. 2.0 2.1. Add Low Power Version. 2.2. Add data retention charactoristic. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications ...
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P 32K x 8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time 10, 12, 15ns(Max.) • Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2mA(Max.) 0.6mA(Max.) L-ver. Only Operating K6E0808C1E-10 : 80mA(Max.) K6E0808C1E-12 : 80mA(Max.) K6E0808C1E-15 : 80mA(Max.) • Single 5.0V 10% Power Supply • TTL Compatible Inputs and Outputs • ...
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P ABSOLUTE MAXIMUM RATINGS* Parameter Voltage on Any Pin Relative Voltage on V Supply Relative Power Dissipation Storage Temperature Operating Temperature Commercial Industrial * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied ...
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P AC CHARACTERISTICS ( TEST CONDITIONS Parameter Input Pulse Levels Input Rise and Fall Times Input and Output timing Reference Levels Output Loads * The above test conditions are also applied at industrial temperature range. Output Loads(A) +5V 480 D OUT 255 30pF* ...
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P WRITE CYCLE* Parameter Write Cycle Time Chip Select to End of Write Address Setup Time Address Valid to End of Write Write Pulse Width(OE High) Write Pulse Width(OE Low) Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time ...
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P TIMING WAVEFORM OF READ CYCLE(2) Address CS OE Data out Current SB NOTES(READ CYCLE high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address and t are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V ...
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P TIMING WAVEFORM OF WRITE CYCLE(2) Address CS WE High-Z Data in Data out TIMING WAVEFORM OF WRITE CYCLE(3) Address CS WE High-Z Data in High-Z Data out NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; ...
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P FUNCTIONAL DESCRIPTION means Don t Care. DATA RETENTION CHARACTERISTICS* Parameter V for Data Retention CC Data Retention Current Data Retention Set-Up Time Recovery Time * The above parameters are also guaranteed at industrial temperature range. Data Retention Characteristic is for L-Ver only. ...
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... K6E0808C1E-C/E-L, K6E0808C1E-I/E-P PACKAGE DIMENSIONS 28-SOJ-300 #28 8.51 0.12 0.335 0.005 #1 +0.10 0.43 0.95 -0. +0.004 0.0375 0.017 -0.002 28-TSOP1-0813.4F +0.10 0.20 -0.05 +0.004 0.008 -0.002 #1 0.55 #14 0.0217 0.25 TYP 0.010 0~8 0.45 ~0.75 0.018 ~0.030 #15 #14 18.82 MAX 0.741 18.41 0.12 0.725 0.005 1.30 ( 0.051 ( 0.051 +0.10 0.71 -0.05 1.27 +0.004 0.028 0.050 -0.002 13.40 0.20 0.528 0.008 #28 #15 11.80 0.10 +0.10 0.465 0.15 0.004 -0.05 +0.004 0.006 -0.002 0. 0.020 ...