MTB23P06 MOTOROLA [Motorola, Inc], MTB23P06 Datasheet - Page 2
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MTB23P06
Manufacturer Part Number
MTB23P06
Description
TMOS POWER FET 23 AMPERES 60 VOLTS
Manufacturer
MOTOROLA [Motorola, Inc]
Datasheet
1.MTB23P06.pdf
(10 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MTB23P06
Manufacturer:
MOT/ON
Quantity:
12 500
Company:
Part Number:
MTB23P06E
Manufacturer:
MOT/ON
Quantity:
12 500
Company:
Part Number:
MTB23P06V/D
Manufacturer:
MOT/ON
Quantity:
12 500
(1) Pulse Test: Pulse Width 300 s, Duty Cycle
(2) Switching characteristics are independent of operating junction temperature.
MTB23P06E
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (2)
SOURCE–DRAIN DIODE CHARACTERISTICS
INTERNAL PACKAGE INDUCTANCE
2
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current (V GS = 20 Vdc, V DS = 0)
Gate Threshold Voltage
Static Drain–Source On–Resistance (V GS = 10 Vdc, I D = 11.5 Adc)
Drain–Source On–Voltage (V GS = 10 Vdc)
Forward Transconductance (V DS = 8.0 Vdc, I D = 11.5 Adc)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
Forward On–Voltage (1)
Reverse Recovery Time
Reverse Recovery Stored Charge
Internal Drain Inductance
Internal Source Inductance
(V GS = 0 Vdc, I D = 250 Adc)
Temperature Coefficient (Positive)
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 125 C)
(V DS = V GS , I D = 250 Adc)
Temperature Coefficient (Negative)
(I D = 23 Adc)
(I D = 11.5 Adc, T J = 125 C)
(See Figure 8)
(See Figure 8)
(See Figure 14)
(See Figure 14)
(Measured from the tab to center of die)
(Measured from the drain lead 0.25 from package to center of die)
(Measured from the source lead 0.25 from package to source bond pad)
Characteristic
(I S = 23 Adc, V GS = 0 Vdc, T J = 125 C)
(T J = 25 C unless otherwise noted)
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DS = 25 Vdc, V GS = 0 Vdc,
(V DD = 30 Vdc, I D = 23 Adc,
(V DD = 30 Vdc, I D = 23 Adc,
(V DS = 48 Vdc, I D = 23 Adc,
(V DS = 48 Vdc, I D = 23 Adc,
(V DS = 48 Vdc, I D = 23 Adc,
(I S = 23 Adc, V GS = 0 Vdc)
(I S = 23 Adc, V GS = 0 Vdc,
(I S = 23 Adc, V GS = 0 Vdc,
(I S = 23 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
dI S /dt = 100 A/ s)
V GS = 10 Vdc)
V GS = 10 Vdc)
V GS = 10 Vdc)
2%.
V GS = 10 Vdc,
V GS = 10 Vdc,
V GS = 10 Vdc,
f = 1.0 MHz)
f = 1.0 MHz)
f = 1.0 MHz)
R G = 10 )
R G = 10 )
R G = 10 )
G = 10 )
Motorola TMOS Power MOSFET Transistor Device Data
V (BR)DSS
R DS(on)
V DS(on)
Symbol
V GS(th)
t d(on)
t d(off)
I DSS
I GSS
C oss
Q RR
C rss
V SD
g FS
C iss
Q T
Q 1
Q 2
Q 3
L D
L S
t rr
t a
t b
t r
t f
Min
2.0
5.0
60
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—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.094
1357
2.21
1.85
Typ
600
200
140
120
600
2.8
3.1
9.0
2.2
3.5
4.5
7.5
18
76
69
75
37
27
—
—
—
—
—
—
—
—
—
1000
1900
Max
0.12
100
100
840
400
280
152
138
105
4.0
3.3
3.0
3.5
36
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—
—
—
—
—
—
—
—
—
—
—
—
—
mV/ C
mV/ C
mhos
nAdc
Ohm
Unit
Vdc
Vdc
Vdc
Vdc
Adc
pF
nC
nH
nH
ns
ns
C