PN307 PANASONIC [Panasonic Semiconductor], PN307 Datasheet
PN307
Manufacturer Part Number
PN307
Description
Silicon planar type For optical control systems
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.PN307.pdf
(3 pages)
PIN Photodiodes
PNA3W01L
Silicon planar type
For optical control systems
■ Features
■ Absolute Maximum Ratings
■ Electrical-Optical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
Publication date: April 2004
• High sensitivity, high reliability
• Peak emission wavelength matched with infrared light emitting
• Double end type small size package
Reverse voltage
Power dissipation
Operating ambient temperature
Storage temperature
Dark current
Photocurrent
Peak emission wavelength
Rise time
Fall time
Rise time
Fall time
Half-power angle
diodes: λ
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed be disregarded radiation.
4. * 1: Source: Tungsten (color temperature 2 856 K)
* 2: Switching time measurement circuit
λ
P
* 2
* 2
* 2
* 2
= 800 nm
p
Parameter
= 800 nm (typ.)
Parameter
* 1
50 Ω
Sig. in
V
R
CC
L
Sig. out
(PN307)
Symbol
Symbol
T
T
V
P
T
opr
stg
D
R
λ
I
I
a
t
t
t
t
θ
D
L
r
f
r
f
p
= 25°C
(Input pulse)
(Output pulse)
a
−30 to +100
−25 to +85
= 25°C ± 3°C
Rating
V
V
V
V
V
The angle from which photocurrent
becomes 50%
Note) The part number in the parenthesis shows conventional part number.
R
R
R
R
R
30
10
= 10 V
= 10 V, L = 1 000 lx
= 10 V
= 10 V, R
= 10 V, R
SHE00029BED
t
r
Conditions
L
L
Unit
mW
°C
°C
V
= 1 kΩ
= 100 kΩ
t
f
90%
10%
1
t
t
r
f
: Rise time
:
Fall time
10.0 min.
Min
5
(φ1.8)
(1.8)
3.2
Type number : cathode mark (Purple)
±0.3
2.8
Typ
800
50
50
24
±0.2
5
5
LTTLW102-001 Package
3.2
R0.9
±0.3
(1.8)
Max
10.0 min.
50
1: Cathode
2: Anode
Unit: mm
Unit
nA
µA
nm
µs
µs
ns
ns
°
2
1
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PN307 Summary of contents
Page 1
... Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation Source: Tungsten (color temperature 2 856 Switching time measurement circuit Sig λ = 800 Ω Publication date: April 2004 (PN307) = 25° Symbol Rating Unit − ...
Page 2
PNA3W01L − °C ) Ambient temperature T a ∆I 160 = ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...