mbm300gr HITACHI, mbm300gr Datasheet - Page 3

• Manufacturer Part Number: mbm300gr
• Description: Hitachi Igbt Module / Silicon N-channel Igbt
• Manufacturer: HITACHI

10000
1000
100
1.5
0.5
60
50
40
30
20
10
10
1
0
0
1
0
0
0
V
V
R
T
Inductive Load
Vcc 600V
V
R
T
Inductive Load
V
R
T
C
CC
GE
C
G
GE
C
G
GE
G
Switching time vs. Collector current
125 C
25 C
3.9
125 C
3.9
Switching loss vs. Collector current
200
3.9
600V
Reverse biased safe operating area
15V
15V
15V
Collector to Emitter Voltage, V
100
100
Collector Current, I
400
Collector Current. I
600
200
200
800
C
1000
C
(A)
(A)
300
300
toff
ton
tf
tr
Eton
CE
Etoff
1200
Err
TYPICAL
TYPICAL
(V)
1400
400
400
0.001
0.01
0.01
100
0.1
0.1
0.1
10
10
1
1
1
0.001
1
1
V
V
I
T
Inductive Load
C
CC
GE
C
300A
25 C
600V
Switching time vs. Gate resistance
15V
Switching loss vs. Gate resistance
Transient thermal impedance
0.01
Gate Resistance, R
Gate Resistance. R
Time, t (s)
0.1
10
10
Etoff
Eton
Err
toff
ton
tr
tf
G
G
V
V
I
T
Inductive Load
C
( )
C
CC
GE
( )
1
300A
125 C
600V
15V
TYPICAL
PDE-M300GR12A-0
TYPICAL
IGBT
Diode
100
100
10