ra08n1317m Quanzhou Jinmei Electronic Co.,Ltd., ra08n1317m Datasheet - Page 2

• Manufacturer Part Number: ra08n1317m
• Description: Mitsubishi Rf Mosfet Module
• Manufacturer: Quanzhou Jinmei Electronic Co.,Ltd.

MAXIMUM RATINGS
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER
All parameters, conditions, ratings, and limits are subject to change without notice.
RA08N1317M
SYMBOL PARAMETER
T
case(OP)
P
V
V
V
P
I
T
2f
η
ρ
—
—
P
GG
f
out
GG
DD
DD
out
stg
in
T
in
o
Drain Voltage
Drain Voltage
Gate Voltage
Input Power
Output Power
Operation Case Temperature Range
Storage Temperature Range
Frequency Range
Output Power
Total Efficiency
2
Input VSWR
Gate Current
Stability
Load VSWR Tolerance
nd
Harmonic
(T
case
=+25°C, unless otherwise specified)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
CONDITIONS
V
P
V
P
V
Load VSWR=4:1
V
Load VSWR=20:1
DD
out
DD
in
DD
DD
=20mW
(T
=9.6V,V
=8W (V
=9.6V,
=4.8-13.2V, P
=13.2V, P
case
=+25°C, Z
MITSUBISHI ELECTRIC
GG
GG
in
=3.5V, P
control),
=20mW, P
CONDITIONS
V
V
V
f=135-175MHz,
Z
G
GG
GG
DD
in
=Z
G
=10-30mW, P
<9.6V, P
=0V, P
<3.5V
=Z
L
=50Ω
L
in
2/8
=50Ω, unless otherwise specified)
=20mW
out
in
=0W
=8W (V
in
<20mW
out
<8W (V
GG
RoHS COMPLIANCE
control),
GG
control),
No degradation or destroy
No parasitic oscillation
MIN
MITSUBISHI RF POWER MODULE
135
50
8
RA08N1317M
-40 to +110
-30 to +90
RATING
TYP
13.2
16
30
10
4
1
MAX
175
-25
4:1
24 Jan 2006
UNIT
UNIT
MHz
mW
dBc
mA
°C
°C
—
—
—
W
W
%
V
V
V