ra08n1317m Quanzhou Jinmei Electronic Co.,Ltd., ra08n1317m Datasheet - Page 4

• Manufacturer Part Number: ra08n1317m
• Description: Mitsubishi Rf Mosfet Module
• Manufacturer: Quanzhou Jinmei Electronic Co.,Ltd.

TYPICAL PERFORMANCE
RA08N1317M
25
20
15
10
14
12
10
14
12
10
5
0
8
6
4
2
0
8
6
4
2
0
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
OUTPUT POWER and DRAIN CURRENT
2
1
1
f=175MHz,
V
P
f=135MHz,
V
P
f=175MHz,
V
P
GG
in
DD
in
DD
in
=20mW
=20mW
=20mW
=3.5V,
=9.6V,
1.5
=9.6V,
1.5
4
DRAIN VOLTAGE V
GATE VOLTAGE V
GATE VOLTAGE V
versus DRAIN VOLTAGE
versus GATE VOLTAGE
versus GATE VOLTAGE
2
2
6
2.5
2.5
ELECTROSTATIC SENSITIVE DEVICE
8
(T
OBSERVE HANDLING PRECAUTIONS
P
case
out
GG
GG
3
3
DD
=+25°C, Z
(V)
(V)
10
(V)
P
out
3.5
3.5
P
I
out
DD
I
I
DD
DD
12
G
4
4
MITSUBISHI ELECTRIC
=Z
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
L
=50Ω, unless otherwise specified)
4/8
OUTPUT POWER and DRAIN CURRENT
14
12
10
8
6
4
2
0
1
f=160MHz,
V
P
RoHS COMPLIANCE
DD
in
=20mW
=9.6V,
1.5
versus GATE VOLTAGE
GATE VOLTAGE V
2
2.5
GG
3
MITSUBISHI RF POWER MODULE
(V)
P
RA08N1317M
out
3.5
I
DD
4
7
6
5
4
3
2
1
0
24 Jan 2006