UNR1110 PANASONIC [Panasonic Semiconductor], UNR1110 Datasheet - Page 2

• Manufacturer Part Number: UNR1110
• Description: Silicon PNP epitaxial planer transistor
• Manufacturer: PANASONIC [Panasonic Semiconductor]

UNR111x Series
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current UNR1112/1114/111D/111E
(Collector open) UNR1113
Forward current UNR1111
transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance UNR1111/1114/1115
Resistance ratio UNR1111/1112/1113/111L R
2. * : Rank classification (UNR1110/1115/1116/1117)
Parameter
Rank
UNR1111
UNR1110/1115/1116/1117
UNR111F/111H
UNR1119
UNR1118/111L
UNR1112/111E
UNR1113/1114
UNR1110
1117
UNR1118/111L
UNR1119/111D/111F/111H
UNR1113
UNR111D
UNR111E
UNR1112/1117
UNR1110/1113/111D/111E
UNR1116/111F/111L
UNR1118
UNR1119
UNR111H
UNR1114
UNR1118/1119
UNR111D
UNR111E
UNR111F
UNR111H
h
FE
*
*
/1115
160 to 260
*
/1116
Q
*
/
a
= 25°C ± 3°C
Symbol
V
V
V
I
I
I
V
V
CE(sat)
h
CBO
CEO
EBO
R
210 to 340
1
f
CBO
CEO
FE
OH
/R
OL
T
1
2
R
I
I
V
V
V
V
I
V
V
V
V
V
V
C
C
C
CB
CE
EB
CE
CC
CC
CC
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00001BED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −10 V, I
290 to 460
S
Conditions
B
C
E
B
B
B
B
C
B
B
E
B
E
= 0
= 0
= 0
= − 0.5 V, R
= −2.5 V, R
= −3.5 V, R
= −10 V, R
= −6 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 2 mA, f = 200 MHz
L
L
= 1 kΩ
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
−4.9
0.17
0.08
0.17
Min
−50
−50
160
0.8
35
60
80
20
30
0.51
0.21
2.14
0.47
0.22
Typ
4.7
2.2
1.0
0.1
4.7
80
10
22
47
1
− 0.01
− 0.25
+30%
− 0.1
− 0.5
− 0.5
− 0.2
− 0.1
− 0.2
Max
−1.0
−1.5
−2.0
0.25
0.12
0.27
460
1.2
MHz
Unit
mA
µA
µA
kΩ


V
V
V
V
V