UNR2110 PANASONIC [Panasonic Semiconductor], UNR2110 Datasheet

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UNR2110

Manufacturer Part Number
UNR2110
Description
Silicon PNP epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
Transistors with built-in Resistor
UNR211x Series
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: December 2003
• Costs can be reduced through downsizing of the equipment and
• Mini type package allowing easy automatic insertion through tape
• UNR2110 (UN2110)
• UNR2111 (UN2111)
• UNR2112 (UN2112)
• UNR2113 (UN2113)
• UNR2114 (UN2114)
• UNR2115 (UN2115)
• UNR2116 (UN2116)
• UNR2117 (UN2117)
• UNR2118 (UN2118)
• UNR2119 (UN2119)
• UNR211D (UN211D)
• UNR211E (UN211E)
• UNR211F (UN211F)
• UNR211H (UN211H)
• UNR211L (UN211L)
• UNR211M (UN211M)
• UNR211N (UN211N)
• UNR211T (UN211T)
• UNR211V (UN211V)
• UNR211Z (UN211Z)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts
packing and magazine packing
Parameter
Marking Symbol (R
6L
6A
6B
6C
6D
6E
6F
6H
6I
6K
6M
6N
6O
6P
6Q
EI
EW
EY
FC
FE
Symbol
V
V
0.51 kΩ
T
4.7 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
P
47 kΩ
22 kΩ
47 kΩ
10 kΩ
I
T
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
22 kΩ
CBO
CEO
a
1 kΩ
C
stg
T
j
= 25°C
1
)
−55 to +150
Rating
−100
−50
−50
200
150
Note) The part numbers in the parenthesis show conventional part number.
(UN211x Series)
5.1 kΩ
4.7 kΩ
2.2 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
47 kΩ
47 kΩ
47 kΩ
22 kΩ
SJH00006CED
(R
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
B
0.40
3
2
+0.10
–0.05
R
R
1
2
Mini3-G1 Package
C
E
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
1

Related parts for UNR2110

UNR2110 Summary of contents

Page 1

... Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing ■ Resistance by Part Number Marking Symbol (R • UNR2110 (UN2110) 6L • UNR2111 (UN2111) 6A • UNR2112 (UN2112) 6B • ...

Page 2

... UNR211D UNR211E Transition frequency UNR2114/2119/211E 211F/211H Input resistance UNR2118 UNR2119 UNR211H/211M/211V UNR2116/211F/211L/211N/211Z UNR2111/2114/2115 UNR2112/2117/211T UNR2110/2113/211D/211E Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors Rank classification Rank Q h 160 to 260 25°C ± 3°C a Symbol Conditions = − ...

Page 3

... Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  250 200 150 100 120 160 Ambient temperature T (°C) a Characteristics charts of UNR2110  −120 = 25° −1 − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − ...

Page 4

UNR211x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR2111 ...

Page 5

Characteristics charts of UNR2112  −160 = 25° −1 − 0.9mA − 0.8mA −120 − 0.7mA − 0.6mA − 0.5mA −80 − 0.4mA − 0.3mA − 0.2mA −40 − 0.1mA ...

Page 6

UNR211x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR2114 ...

Page 7

Characteristics charts of UNR2115  −160 = 25° −1 − 0.9 mA − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA − 0.4 mA −80 − ...

Page 8

UNR211x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR2117 ...

Page 9

Characteristics charts of UNR2118  −240 = 25° −200 = − 1 − 0.9 mA −160 − 0.8 mA − 0.7 mA −120 − 0.6 mA − 0.5 mA −80 − ...

Page 10

UNR211x Series  MHz 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR211D ...

Page 11

Characteristics charts of UNR211E  −60 = −1 25° − 0.9 mA − 0.8 mA − 0.7 mA −50 −40 − 0.3 mA −30 − 0.2 mA − 0.6 mA ...

Page 12

UNR211x Series  MHz = 25° − 0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR211H ...

Page 13

Characteristics charts of UNR211L  −240 = 25° −200 −160 = −1 −120 − 0.8 mA −80 − 0.6 mA − 0.4 mA −40 − 0 – 2 ...

Page 14

UNR211x Series  MHz = 25° −0.1 −1 −10 −100 Collector-base voltage V (V) CB Characteristics charts of UNR211N  V ...

Page 15

Characteristics charts of UNR211T  −200 = 25° −150 = −1 –0.9 mA –0.8 mA −100 –0.7 mA –0.6 mA –0.5 mA − 0.4 mA −50 − 0.3 mA − 0.2 ...

Page 16

UNR211x Series  − − 25° −10 3 −10 2 −10 −1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 Input voltage V (V) IN Characteristics charts of UNR211Z  ...

Page 17

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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