BPV23F_05 VISHAY [Vishay Siliconix], BPV23F_05 Datasheet - Page 2

• Manufacturer Part Number: BPV23F_05
• Description: Silicon PIN Photodiode
• Manufacturer: VISHAY [Vishay Siliconix]

BPV23F(L)
Vishay Semiconductors
Electrical Characteristics
T
Optical Characteristics
T
www.vishay.com
2
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode capacitance
Serial Resistance
Open Circuit Voltage
Temp. Coefficient of V
Short Circuit Current
Reverse Light Current
Temp. Coefficient of I
Absolute Spectral Sensitivity
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
Rise Time
Fall Time
Cut-Off Frequency
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
ra
o
I
I
V
V
V
E
E
E
E
V
E
V
V
V
λ = 950 nm
V
V
V
V
V
V
F
R
R
R
R
e
e
e
e
R
e
R
R
R
R
R
R
R
R
R
= 50 mA
= 100 µA, E = 0
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 1 mW/cm
= 10 V, R
= 10 V, R
= 12 V, R
= 12 V, R
= 10 V, E = 0
= 0 V, f = 1 MHz, E = 0
= 12 V, f = 1 MHz
= 5 V
= 10 V
= 5 V, λ = 870 nm
= 5 V, λ = 950 nm
= 10 V, λ = 950 nm
= 10 V, λ = 950 nm
Test condition
Test condition
L
L
L
L
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 870 nm
= 1 kΩ, λ = 950 nm
2
2
2
2
2
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm
, λ = 950 nm,
, λ = 950 nm,
Symbol
Symbol
V
TK
TK
NEP
s(λ)
s(λ)
λ
C
R
V
V
D
(BR)
I
I
λ
I
ϕ
η
f
f
0.5
t
t
ro
ra
k
c
c
p
r
f
F
D
S
o
Vo
Ira
*
Min
Min
60
45
870 to 1050
4 x 10
5 x 10
- 2.6
0.35
± 60
Typ.
Typ.
900
390
950
0.2
0.6
48
60
63
90
70
70
1
2
4
1
-14
12
Document Number 81510
Max
Max
1.3
30
Rev. 1.4, 08-Mar-05
cm√Hz/W
W/√ Hz
mV/K
MHz
MHz
%/K
A/W
A/W
Unit
Unit
deg
mV
nm
nm
µA
µA
nA
pF
ns
ns
%
V
V
Ω