MOC8112-X006 VISHAY [Vishay Siliconix], MOC8112-X006 Datasheet - Page 2

• Manufacturer Part Number: MOC8112-X006
• Description: Optocoupler, Phototransistor Output, No Base Connection
• Manufacturer: VISHAY [Vishay Siliconix]

MOC8111/MOC8112
Vishay Semiconductors
Notes
(1)
(2)
Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
2
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
COUPLER
Isolation test voltage between emitter
and detector refer to standard climate
23/50 DIN 50014
Creepage distance
Clearance distance
Isolation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature range
Ambient temperature range
Soldering temperature
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
Reverse leakage current
Junction capacitance
OUTPUT
Collector emitter breakdown voltage
Collector emitter leakage current
Emitter collector breakdown voltage
Collector emitter capacitance
COUPLER
Collector saturation voltage
CURRENT TRANSFER RATIO
PARAMETER
Current transfer ratio
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on time
Turn-off time
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
max. 10 s, dip soldering distance
V
Optocoupler, Phototransistor Output,
V
to seating plane ≥ 1.5 mm
I
I
IO
I
V
V
I
C
C
IO
V
C
F
CC
CC
V = 0 V, f = 1.0 MHz
CE
= 2.0 mA, see figure 1
= 2.0 mA, see figure 1
TEST CONDITION
TEST CONDITION
= 500 V, T
TEST CONDITION
TEST CONDITION
= 500 µA, I
= 10 mA, V
= 500 V, T
= 10 V, R
= 10 V, R
= 0 V, f = 1.0 MHz
(1)
I
V
I
V
I
F
C
E
CE
R
= 10 mA
= 1.0 µA
= 10 µA
= 6.0 V
No Base Connection
= 10 V
amb
amb
F
CE
L
L
= 10 mA
= 100 Ω
= 100 Ω
= 100 °C
= 10 V
= 25 °C
MOC8111
MOC8112
SYMBOL
SYMBOL
PART
BV
BV
V
I
C
CEsat
CEO
V
I
C
t
t
SYMBOL
R
CEO
ECO
CE
on
off
F
j
V
T
CTI
R
R
T
T
amb
ISO
stg
sld
IO
IO
SYMBOL
CTR
CTR
MIN.
MIN.
7.0
30
MIN.
- 55 to + 150
- 55 to + 100
20
50
VALUE
5300
10
10
TYP.
175
260
1.15
0.05
0.15
TYP.
≥ 7
≥ 7
≥ 4
1.0
7.0
25
7.5
5.7
12
11
TYP.
Document Number: 83661
MAX.
MAX.
1.5
0.4
10
50
20
20
Rev. 1.5, 11-Jan-08
MAX.
UNIT
V
mm
mm
mm
°C
°C
°C
RMS
Ω
Ω
UNIT
UNIT
UNIT
µA
pF
nA
pF
µs
µs
V
V
V
V
%
%