LTC3736 LINER [Linear Technology], LTC3736 Datasheet - Page 15

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LTC3736

Manufacturer Part Number
LTC3736
Description
Dual 2-Phase, No RSENSE Synchronous Controller with Output Tracking
Manufacturer
LINER [Linear Technology]
Datasheet

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APPLICATIO S I FOR ATIO
The MOSFET power dissipations at maximum output
current are:
Both MOSFETs have I
includes an additional term for transition losses, which are
largest at high input voltages. The constant k = 2A
be used to estimate the amount of transition loss. The
bottom MOSFET losses are greatest at high input voltage
or during a short circuit when the bottom duty cycle is
nearly 100%.
The LTC3736 utilizes a nonoverlapping, antishoot-through
gate drive control scheme to ensure that the P- and
N-channel MOSFETs are not turned on at the same time.
To function properly, the control scheme requires that the
MOSFETs used are intended for DC/DC switching applica-
tions. Many power MOSFETs, particularly P-channel
MOSFETs, are intended to be used as static switches and
therefore are slow to turn on or off.
Reasonable starting criteria for selecting the P-channel
MOSFET are that it must typically have a gate charge (Q
P
P
BOT
TOP
V
2.0
1.5
1.0
0.5
V
I
V
0
IN
OUT
OUT MAX
– 50
IN
Figure 4. R
V
IN
(
V
OUT
I
JUNCTION TEMPERATURE ( C)
OUT MAX
U
0
)
(
2
I
DS(ON)
R losses and the P
OUT MAX
T
U
)
50
2
(
R
vs Temperature
DS ON
(
T
)
2
W
100
)
R
DS ON
T
(
3736 F04
R
150
)
DS ON
TOP
(
k V
U
equation
)
IN
–1
2
can
G
)
less than 25nC to 30nC (at 4.5V
(t
to differences in test and specification methods of various
MOSFET manufacturers, and in the variations in Q
t
ultimately should be evaluated in the actual LTC3736
application circuit to ensure proper operation.
Shoot-through between the P-channel and N-channel
MOSFETs can most easily be spotted by monitoring the
input supply current. As the input supply voltage in-
creases, if the input supply current increases dramatically,
then the likely cause is shoot-through. Note that some
MOSFETs that do not work well at high input voltages (e.g.,
V
Table 1 shows a selection of P-channel MOSFETs from
different manufacturers that are known to work well in
LTC3736 applications.
Selecting the N-channel MOSFET is typically easier, since
for a given R
off delays are much smaller than for a P-channel MOSFET.
Table 1. Selected P-Channel MOSFETs Suitable for LTC3736
Applications
PART
NUMBER
Si7540DP
Si9801DY
FDW2520C
FDW2521C
Si3447BDV
Si9803DY
FDC602P
FDC606P
FDC638P
FDW2502P
FDS6875
HAT1054R
NTMD6P02R2-D
D(OFF)
IN
D(OFF)
> 5V) may work fine at lower voltages (e.g., 3.3V).
with gate drive (V
) of less than approximately 140ns. However, due
DS(ON)
MANUFACTURER
Siliconix
Siliconix
Fairchild
Fairchild
Siliconix
Siliconix
Fairchild
Fairchild
Fairchild
Fairchild
Fairchild
On Semi
, the gate charge and turn-on and turn-
Hitachi
IN
) voltage, the P-channel MOSFET
Complementary
Complementary
Complementary
Complementary
GS
Single P
Single P
Single P
Single P
Single P
Dual P
Dual P
Dual P
Dual P
TYPE
) and a turn-off delay
P/N
P/N
P/N
P/N
LTC3736
PowerPak
PACKAGE
TSSOP-8
TSSOP-8
TSSOP-8
TSOP-6
TSOP-6
TSOP-6
TSOP-6
SO-8
SO-8
SO-8
SO-8
SO-8
SO-8
15
G
and
3736f

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