FW811 SANYO [Sanyo Semicon Device], FW811 Datasheet - Page 4
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FW811
Manufacturer Part Number
FW811
Description
General-Purpose Switching Device Applications
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet
1.FW811.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
2.5
2.2
2.0
1.5
1.0
0.5
10
9
8
7
6
5
4
3
2
1
0
0
0
0
Note on usage : Since the FW811 is a MOSFET product, please avoid using this device in the vicinity
This catalog provides information as of December, 2009. Specifi cations and information herein are subject
to change without notice.
V DS =20V
I D =8A
1
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
20
2
3
Ambient Temperature, Ta -- °C
40
Total Gate Charge, Qg -- nC
4
When mounted on ceramic substrate
(2000mm
of highly charged objects.
60
V GS -- Qg
5
P D -- Ta
6
80
2
7
×0.8mm), PW≤10s
100
8
9
120
10
11
140
IT15287
IT15080
12
160
13
FW811
0.01
100
1.0
0.1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
0.01
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25° C
Single pulse
When mounted on ceramic substrate (2000mm
Allowable Power Dissipation(FET2), P D -- W
Operation in this
area is limited by R DS (on).
0.2
2 3
0.4
5 7
Drain-to-Source Voltage, V DS -- V
P D (FET1) -- P D (FET2)
0.1
0.6
2 3
0.8
When mounted on ceramic substrate
(2000mm
A S O
1.0
5 7
1.0
2
1.2
×0.8mm), PW≤10s
2 3
1.4
2
×0.8mm) 1unit
5 7
PW≤10μs
1.6
PS
10
1.8
No. A1570-4/4
2 3
2.0
IT15079
IT15081
5
2.2
7