CY7C1361B CYPRESS [Cypress Semiconductor], CY7C1361B Datasheet - Page 11

• Manufacturer Part Number: CY7C1361B
• Description: 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
• Manufacturer: CYPRESS [Cypress Semiconductor]

Document #: 38-05302 Rev. *B
CY7C1363B: Pin Definitions
ADSC
ZZ
DQ
DQP
MODE
V
V
DD
DDQ
Name
s
[A:B]
58,59,62,63,
68,69,72,73,
18,19,22,23
15,41,65,91 15,41,65,91 C4,J2,J4,
54,61,70,77
4,11,20,27,
8,9,12,13,
Enable)
(3-Chip
TQFP
74,24
85
64
31
58,59,62,63,
68,69,72,73,
18,19,22,23
54,61,70,77
4,11,20,27,
8,9,12,13,
Enable)
(2-Chip
TQFP
74,24
85
64
31
(continued)
P7,K7,G7,
E2,G2,K2,
M1,M7,U1
E7,F6,H6,
L6,N6,D1,
H1,L1,N1,
A1,A7,F1,
F7,J1,J7,
Enable)
(2-Chip
D6,P2
J6,R4
BGA
,U7
M2
R3
B4
T7
F11,G11,J1,
L9,M3,M9,
K1,L1,M1,
D4,D8,E4,
C3,C9,D3,
D9,E3,E9,
D2,E2,F2,
H4,H8,J4,
L4,L8,M4,
F3,F9,G3,
E8,F4,F8,
J8,K4,K8,
G9,J3,J9,
K3,K9,L3,
L10,M10,
D11,E11,
J10,K10,
Enable)
(3-Chip
C11,N1
G4,G8,
N3,N9
fBGA
H11
M8
G2
R1
A8
Asynchronous
Power Supply Power supply inputs to the core of the
Synchronous
Synchronous
Synchronous
Input-Static
I/O Power
Supply
Input-
Input-
I/O-
I/O-
I/O
Address Strobe from Controller,
sampled on the rising edge of CLK,
active LOW. When asserted LOW,
addresses presented to the device are
captured in the address registers. A
also loaded into the burst counter. When
ADSP and ADSC are both asserted, only
ADSP is recognized .
ZZ “sleep” Input, active HIGH. When
asserted HIGH places the device in a
non-time-critical “sleep” condition with data
integrity preserved. For normal operation,
this pin has to be LOW or left floating. ZZ pin
has an internal pull-down.
Bidirectional Data I/O lines. As inputs,
they feed into an on-chip data register that
is triggered by the rising edge of CLK. As
outputs, they deliver the data contained in
the memory location specified by the
addresses presented during the previous
clock rise of the read cycle. The direction of
the pins is controlled by OE. When OE is
asserted LOW, the pins behave as outputs.
When HIGH, DQ
in a three-state condition. The outputs are
automatically three-stated during the data
portion of a write sequence, during the first
clock when emerging from a deselected
state, and when the device is deselected,
regardless of the state of OE.
Bidirectional Data Parity I/O Lines.
Functionally, these signals are identical to
DQ
controlled by BW
Selects Burst Order. When tied to GND
selects linear burst sequence. When tied to
V
sequence. This is a strap pin and should
remain static during device operation. Mode
Pin has an internal pull-up.
device.
Power supply for the I/O circuitry.
DD
s
. During write sequences, DQP
or left floating selects interleaved burst
Description
s
[A:B]
and DQP
correspondingly.
CY7C1361B
CY7C1363B
[A:B]
Page 11 of 34
are placed
[1:0]
[A:B]
are
is