AP4503AGM A-POWER [Advanced Power Electronics Corp.], AP4503AGM Datasheet - Page 5

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AP4503AGM

Manufacturer Part Number
AP4503AGM
Description
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Manufacturer
A-POWER [Advanced Power Electronics Corp.]
Datasheet

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N-Channel
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
90%
10%
V
DS
GS
Single Pulse
3
T
V
A
DS
Q
=25
t
d(on)
G
V
, Drain-to-Source Voltage (V)
I
DS
, Total Gate Charge (nC)
o
6
1
D
C
= 6 A
= 24 V
t
r
9
12
10
t
d(off)
t
f
15
100us
1ms
10ms
100ms
1s
DC
100
18
Fig 10. Effective Transient Thermal Impedance
1000
100
0.01
10
0.1
1
0.0001
1
Fig 8. Typical Capacitance Characteristics
Fig 12. Gate Charge Waveform
4.5V
30
Duty factor=0.5
V
0.02
0.01
0.05
0.1
0.2
0.001
G
5
Single Pulse
V
Q
DS
GS
0.01
9
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Q
Q
13
0.1
G
GD
Charge
-30
17
1
AP4503AGM
P
DM
Duty factor = t/T
Peak T
R
21
thja
10
=135
j
= P
t
o
C/W
DM
f=1.0MHz
T
x R
25
100
thja
+ T
C
C
Q
C
a
iss
rss
oss
1000
29
5

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