LMX2542LQ2121 NSC [National Semiconductor], LMX2542LQ2121 Datasheet - Page 6

• Manufacturer Part Number: LMX2542LQ2121
• Description: PLLatinum Cellular and GPS Frequency Synthesizer System with Integrated VCO
• Manufacturer: NSC [National Semiconductor]

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Icc PARAMETERS
I
(I
I
I
RF SYNTHESIZER SYSTEM PARAMETERS
RF VCO
f
p
φ
L
CC
DD
PD
RFout
RFout
eRF
RF
CC
Absolute Maximum Ratings
3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
V
Symbol
)
Power Supply Voltage
Voltage on any pin to GND (V
Storage Temperature Range (T
Lead Temperature (solder 4 s) (T
(f)
CC
+ I
RF
+
V
V
V
DD
= V
CC
DD
IN
must be
to GND
to GND
DD
Power Supply Current
(RF and IF Synthesizer Systems)
Power Supply Current
(RF Synthesizer System)
Powerdown Current
RF VCO Operating Frequency
(Notes 4, 5)
RF VCO Output Power
RF VCO RMS Phase Error
RF VCO Single Side Band Phase
Noise
= CE = 2.8V, T
<
+3.6V
Parameter
A
= +25˚C, unless otherwise specified
IN
S
)
)
L
)
−0.3V to V
−0.3V to V
−65˚C to +150˚C
−0.3V to +3.6V
−0.3V to +3.6V
(Notes 1, 2,
CC
DD
+260˚C
RF_EN Bit = 1
IF_EN Bit = 1
OB_CRL[1:0] Word = 00
VCO_CUR[1:0] Word = 11
IF_CUR[1:0] Word = 00
RF_EN Bit = 1
IF_EN Bit = 0
OB_CRL[1:0] Word = 00
VCO_CUR[1:0] Word = 11
CE, CLK, DATA and LE = 0V
OSCin = 0V
(RF_EN Bit = 0 and IF_EN Bit = 0)
OB_CRL[1:0] Word = 00
OB_CRL[1:0] Word = 01
OB_CRL[1:0] Word = 10
OB_CRL[1:0] Word = 11
f = 100 kHz Offset
TCXO Reference Source
OSC_FREQ Bit = 0 or 1
OB_CRL[1:0] Word = 11
IF_EN Bit = 0
f = 900 kHz Offset
TCXO Reference Source
OSC_FREQ Bit = 0 or 1
OB_CRL[1:0] Word = 11
IF_EN Bit = 0
+0.3V
+0.3V
6
Conditions
Recommended Operating
Conditions
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate condi-
tions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test condi-
tions, refer to the Electrical Characteristics section. The guaranteed specifi-
cations apply only for the conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
rating
should be done at ESD protected work stations.
Note 3: GND = 0V.
Power Supply Voltage
V
V
Operating Temperature (T
CC
DD
<
to GND
to GND
2kV and is ESD sensitive. Handling and assembly of this device
2087.73
−7.5
−5.0
−2.5
Min
0.0
A
)
Value
−109
−134
22.0
20.0
−4.5
−2.0
Typ
0.5
3.0
1.3
−30˚C to +85˚C
+2.7V to +3.3V
+2.7V to +3.3V
2155.14
−107
–133
Max
24.0
22.0
20.0
−1.5
1.0
3.5
6.0
Units
Deg.
MHz
dBm
dBm
dBm
dBm
dBc/
dBc/
mA
mA
µA
Hz
Hz