M48T02_10 STMICROELECTRONICS [STMicroelectronics], M48T02_10 Datasheet - Page 16

• Manufacturer Part Number: M48T02_10
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Clock operations
3.5
16/25
V
I
fluctuations, resulting in spikes on the V
capacitors are used to store energy which stabilizes the V
bypass capacitors will be released as low going spikes are generated or energy will be
absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 µF (as shown in
Figure 10 on page
In addition to transients that are caused by normal SRAM operation, power cycling can
generate negative voltage spikes on V
one volt. These negative spikes can cause data corruption in the SRAM while in battery
backup mode. To protect from these voltage spikes, it is recommended to connect a
Schottky diode from V
1N5817 is recommended for through hole and MBRS120T3 is recommended for surface
mount.
Figure 10. Supply voltage protection
CC
CC
transients, including those produced by output switching, can produce voltage
noise and negative going transients
16) is recommended in order to provide the needed filtering.
CC
to V
V CC
SS
0.1μF
Doc ID 2410 Rev 8
(cathode connected to V
CC
CC
that drive it to values below V
bus. These transients can be reduced if
V CC
V SS
DEVICE
CC
CC
, anode to V
bus. The energy stored in the
SS
SS
M48T02, M48T12
by as much as
). Schottky diode
AI02169