V62C1801024L-100B MOSEL [Mosel Vitelic, Corp], V62C1801024L-100B Datasheet

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V62C1801024L-100B

Manufacturer Part Number
V62C1801024L-100B
Description
Ultra Low Power 128K x 8 CMOS SRAM
Manufacturer
MOSEL [Mosel Vitelic, Corp]
Datasheet
REV. 1.1 April 2001 V62C1801024L(L)
Features
• Ultra Low-power consumption
• Single +1.8V to 2.2V Power Supply
• Equal access and cycle time
• 70/85/100/150 ns access time
• Easy memory expansion with CE1 , CE2
• 1.0V data retention mode
• TTL compatible, Tri-state input/output
• Automatic power-down when deselected
Logic Block Diagram
- Active: 20mA at 70ns
- Stand-by: 5 A
and OE inputs
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
1
2
3
4
5
6
7
8
9
0
0
1
2
3
4
5
6
7
8
A
9
A
A
10
10
COLUMN DECODER
COLUMN DECODER
A
A
11
11
1 A
INPUT BUFFER
INPUT BUFFER
A
A
12
12
1024
1024
1024
1024
X
X
A
A
13
13
CMOS input/output, L version
(CMOS input/output)
A
A
14
14
A
A
15
15
A
A
16
16
CONTROL
CONTROL
CIRCUIT
CIRCUIT
I/O8
I/O1
I/O
I/O
7
0
WE
WE
OE
OE
CE1
CE2
CE1
CE2
1
utomatic power-down mode feature when deselected.
Writing to the device is accomplished by taking Chip E-
nable 1 (CE1 ) with Write Enable (WE ) LOW, and Chip Ena-
ble 2 (CE2) HIGH. Reading from the device is performed by
taking Chip Enable 1 (CE1) with Output Enable (OE)
Functional Description
The V62C1801024L is a low power CMOS Static RAM or-
ganized as 131,072 words by 8 bits. Easy memory expansion
is provided by an active LOW CE1 , an active HIGH CE2, an
active LOW OE , and Tri-state I/O’s. This device has an a-
LOW while Write Enable (WE ) and Chip Enable 2 (CE2)
is HIGH. The I/O pins are placed in a high-impedance st-
ate when the device is deselected: the outputs are disabled
during a write cycle.
The V62C1801024LL comes with a 1V data retention feature
and Lower Standby Power. The V62C1801024L is available in
a 32-pin 8 x 20 mm TSOP1 / STSOP / 48-fpBGA packages.
32-Pin TSOP1 / STSOP
CE
WE
Vcc
A
A
A
A
A
A
NC
A
A
A
A
A
A
14
11
13
15
16
12
9
8
2
7
6
5
4
10
11
12
13
14
15
16
1
2
3
4
5
6
7
8
9
V62C1801024L(L)
128K x 8 CMOS SRAM
Ultra Low Power
(See next page)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
GND
A
A
CE1
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
A
A
A
10
0
1
2
3
8
7
6
5
4
3
2
1

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V62C1801024L-100B Summary of contents

Page 1

... REV. 1.1 April 2001 V62C1801024L(L) Functional Description The V62C1801024L is a low power CMOS Static RAM or- ganized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 , an active HIGH CE2, an active LOW OE , and Tri-state I/O’s. This device has an a- utomatic power-down mode feature when deselected. ...

Page 2

... A Top View 48-CSP Ball-Grid Array package (shading indicates no ball REV. 1.1 April 2001 V62C1801024L( TOP VIEW CE2 ...

Page 3

... Key Don’t Care Low High Recommended Operating Conditions Parameter Supply Voltage Input Voltage * V min = -1.0V for pulse width less than For Industrial Temperature. REV. 1.1 April 2001 V62C1801024L(L) Symbol Minimum Tstg Tbias WE OE Data X X High High-Z ...

Page 4

... This parameter is guaranteed by device characterization and is not production tested. AC Test Conditions Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Level Output Load Condition 70ns/85 ns Load 100ns/150 ns REV. 1.1 April 2001 V62C1801024L( 1.8 to 2.2V, Gnd = 0V Test Conditions Sym Min Max Min Max Min Max Min Max I V ...

Page 5

... Address Setup Time Write Pulse Width Write Recovering Time Data Valid to Write End Data Hold Time Write Enable to Output in High-Z Output Active from Write End REV. 1.1 April 2001 V62C1801024L(L) = 1.8 to 2.2V, Gnd = 0V Symbol -70 Min Max Min Max Min Max Min Max ...

Page 6

... Timing Waveform of Read Cycle 1 Address D OUT Timing Waveform of Read Cycle 2 CE1 OE D OUT Supply Current Timing Waveform of Read Cycle 3 CE2 OE D OUT Supply Current REV. 1.1 April 2001 V62C1801024L(L) (3,6,7,9) (Address Controlled Data Valid (5,6,8,9) (CE1 Controlled OLZ t ACE ...

Page 7

... Timing Waveform of Write Cycle 1 Address OUT Timing Waveform of Write Cycle 2 Address CE1 OUT Timing Waveform of Write Cycle 3 Address CE2 OUT REV. 1.1 April 2001 V62C1801024L(L) (10,11) (WE Controlled Data Valid t WZ (10,11) (CE1 Controlled ...

Page 8

... All read cycle timings are referenced from the last valid address to the first transtion address. 10. CE1 or WE must be HIGH or CE2 must be LOW during address transition. 11. All write cycle timings are referenced from the last valid address to the first transition address. REV. 1.1 April 2001 V62C1801024L(L) (L Version Only) Symbol ...

Page 9

... V62C1801024LL-85V V62C1801024LL-100V V62C1801024LL-150V V62C1801024L(L)-70B V62C1801024L(L)-85B V62C1801024L(L)-10 0B V62C1801024L(L)-150 B * For Indu strial Temperature tested devices, an “I” designator will be added to the end of the device number. REV. 1.1 April 2001 V62C1801024L(L) V62C1801024L(L) Speed Package 32-pin Plastic TSOP1 85 ns 100 ns ...

Page 10

... If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications. V62C1801024L(L) UK & IRELAND SUITE 50, GROVEWOOD BUSINESS CENTRE ...

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