IS42S16800B ISSI [Integrated Silicon Solution, Inc], IS42S16800B Datasheet - Page 17

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IS42S16800B

Manufacturer Part Number
IS42S16800B
Description
16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
Manufacturer
ISSI [Integrated Silicon Solution, Inc]
Datasheet

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IS42S81600B,
OPERATING FREQUENCY / LATENCY RELATIONSHIPS
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. E
05/01/06
SYMBOL PARAMETER
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
CAC
RCD
RAC
RC
RAS
RP
RRD
CCD
DPL
DAL
RBD
WBD
RQL
WDL
PQL
QMD
DMD
MRD
Clock Cycle Time
Operating Frequency (CAS Latency = 3)
CAS Latency
Active Command To Read/Write Command Delay Time
RAS Latency (t
Command Period (REF to REF / ACT to ACT)
Command Period (ACT to PRE)
Command Period (PRE to ACT)
Command Period (ACT[0] to ACT [1])
Column Command Delay Time
(READ, READA, WRIT, WRITA)
Input Data To Precharge Command Delay Time
Input Data To Active/Refresh Command Delay Time
(During Auto-Precharge)
Burst Stop Command To Output in HIGH-Z Delay Time
(Read)
Burst Stop Command To Input in Invalid Delay Time
(Write)
Precharge Command To Output in HIGH-Z Delay Time
(Read)
Precharge Command To Input in Invalid Delay Time
(Write)
Last Output To Auto-Precharge Start Time (Read)
DQM To Output Delay Time (Read)
DQM To Input Delay Time (Write)
Mode Register Set To Command Delay Time
RCD
IS42S16800B
+ t
CAC
)
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
CAS Latency = 3
CAS Latency = 2
1-800-379-4774
167
10
-2
6
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
143
10
–2
7
3
3
6
7
3
2
1
2
5
3
0
3
0
2
0
2
133
7.5
-1
2
3
5
9
6
3
2
1
2
5
2
0
2
0
2
0
2
100
ISSI
10
-1
2
2
4
7
5
2
2
1
2
4
2
0
2
0
2
0
2
UNITS
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
cycle
MHz
ns
17
®

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