M27C400-100B6TR STMICROELECTRONICS [STMicroelectronics], M27C400-100B6TR Datasheet - Page 5

• Manufacturer Part Number: M27C400-100B6TR
• Description: 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Table 7. Read Mode DC Characteristics
(T
Note: 1. V
System Considerations
The power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
supplies to the devices. The supply current I
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E. The magnitude of the
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device out-
puts. The associated transient voltage peaks can
be suppressed by complying with the two line out-
put control and by properly selected decoupling
capacitors. It is recommended that a 0.1µF ceram-
ic capacitor is used on every device between V
and V
low inherent inductance and should be placed as
close as possible to the device. In addition, a
4.7µF electrolytic capacitor should be used be-
tween V
Symbol
A
V
I
I
V
V
I
I
CC1
CC2
I
V
IH
= 0 to 70 °C or –40 to 85 °C; V
I
CC
LO
PP
OL
OH
LI
2. Maximum DC voltage on Output is V
IL
(2)
SS
CC
. This should be a high frequency type of
CC
must be applied simultaneously with or before V
Input Leakage Current
Output Leakage Current
Supply Current
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
Program Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage TTL
and V
SS
for every eight devices. This
Parameter
CC
CC
+0.5V.
= 5V ± 5% or 5V ± 10%; V
(1)
PP
CC
CC
and removed simultaneously or after V
I
I
OUT
OUT
0V
E = V
E = V
Test Condition
E > V
0V
I
OH
I
= 0mA, f = 8MHz
= 0mA, f = 5MHz
OL
V
capacitor should be mounted near the power sup-
ply connection point. The purpose of this capacitor
is to overcome the voltage drop caused by the in-
ductive effects of PCB traces.
Programming
When delivered (and after each erasure for UV
EPROM), all bits of the M27C400 are in the '1'
state. Data is introduced by selectively program-
ming '0's into the desired bit locations. Although
only '0's will be programmed, both '1's and '0's can
be present in the data word. The only way to
change a '0' to a '1' is by die exposition to ultravio-
let light (UVEPROM). The M27C400 is in the pro-
gramming mode when V
at V
grammed is applied to 16 bits in parallel to the data
output pins. The levels required for the address
and data inputs are TTL. V
6.25V ± 0.25V.
PP
E = V
V
= –400µA
IL
IL
V
= 2.1mA
CC
OUT
, G = V
, G = V
IN
= V
IH
– 0.2V
IH
and E is pulsed to V
CC
V
V
CC
CC
IL
IL
PP
,
,
= V
CC
)
PP
–0.3
Min
2.4
PP
2
.
IL
input is at 12.5V, G is
CC
. The data to be pro-
is specified to be
V
CC
Max
±10
100
0.4
0.8
±1
70
50
10
1
+ 1
M27C400
Unit
mA
mA
mA
µA
µA
µA
µA
V
V
V
V
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