IS93C46B-3GRA ISSI [Integrated Silicon Solution, Inc], IS93C46B-3GRA Datasheet

no-image

IS93C46B-3GRA

Manufacturer Part Number
IS93C46B-3GRA
Description
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
Manufacturer
ISSI [Integrated Silicon Solution, Inc]
Datasheet
IS93C46B
1,024-BIT SERIAL ELECTRICALLY
ERASABLE PROM
FEATURES
• Industry-standard Microwire Interface
• x16 bit organization
• Hardware and software write protection
• Enhanced low voltage CMOS E
• Versatile, easy-to-use Interface
• Durable and reliable
• Industrial and Automotive Temperature Grade
FUNCTIONAL BLOCK DIAGRAM
Integrated Silicon Solution, Inc. — www.issi.com —
R e v . A
07/23/03
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
— Non-volatile data storage
— Low voltage operation:
— Full TTL compatible inputs and outputs
— Auto increment for efficient data dump
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
technology
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Chip select enables power savings
— 40-year data retention after 1M write cycles
— 1 million write cycles
— Unlimited read cycles
— Schmitt-trigger inputs
D
IN
CS
SK
Vcc = 2.5V to 5.5V
INSTRUCTION
REGISTER
INSTRUCTION
GENERATION
CONTROL,
DECODE,
CLOCK
AND
2
PROM
REGISTER
REGISTER
ADDRESS
ENABLE
WRITE
DATA
1-800-379-4774
DESCRIPTION
The IS93C46B is a low-cost 1kb non-volatile,
ISSI
enhanced CMOS design and process. The
IS93C46B contains power-efficient read/write
memory, and organization of 64 words of 16 bits.
The IS93C46B is fully backward compatible with
IS93C46.
An instruction set defines the operation of the
devices, including read, write, and mode-enable
functions. To protect against inadvertent data
modification, all erase and write instructions are
accepted only while the device is write-enabled. A
selected x16 word can be modified with a single
WRITE or ERASE instruction. Additionally, the
two instructions WRITE ALL or ERASE ALL can
program the entire array. Once a device begins
its self-timed program procedure, the data out pin
(Dout) can indicate the READY/BUSY status by
raising chip select (CS). The self-timed write cycle
includes an automatic erase-before-write
capability. The device can output any number of
consecutive words using a single READ
instruction.
®
serial EEPROM. It is fabricated using an
DUMMY
AMPS
R/W
BIT
HIGH VOLTAGE
DECODER
ADDRESS
GENERATOR
ISSI
JULY 2003
EEPROM
ARRAY
64x16
D
OUT
®
1

Related parts for IS93C46B-3GRA

IS93C46B-3GRA Summary of contents

Page 1

... EEPROM fabricated using an enhanced CMOS design and process. The IS93C46B contains power-efficient read/write memory, and organization of 64 words of 16 bits. The IS93C46B is fully backward compatible with IS93C46. An instruction set defines the operation of the devices, including read, write, and mode-enable functions ...

Page 2

... The output on D low-to-high transitions of SK (see Figure 3). Low Voltage Read The IS93C46B has been designed to ensure that data read operations are reliable in low voltage environments. They provide accurate operation with Vcc as low as 2.5V. Auto Increment Read Operations ...

Page 3

... Figure 5). The READY/ BUSY status will not be available if: a) The CS input goes HIGH after the end of the self-timed programming cycle Simultaneously CS is HIGH, Din is HIGH, and WP SK goes HIGH, which clears the status flag. INSTRUCTION SET - IS93C46B Instruction Start Bit READ 1 WEN 1 ...

Page 4

... IS93C46B ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Voltage with Respect to GND GND T Temperature Under Bias (Industrial) BIAS T Temperature Under Bias (Automotive) BIAS T Storage Temperature STG Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied ...

Page 5

... IS93C46B DC ELECTRICAL CHARACTERISTICS T = 0°C to +70°C for Commercial, –40°C to +85°C for Industrial, and –40°C to +125°C for Automotive. A Symbol Parameter V Output LOW Voltage OL V Output LOW Voltage OL1 V Output HIGH Voltage OH V Output HIGH Voltage OH1 V Input HIGH Voltage ...

Page 6

... IS93C46B POWER SUPPLY CHARACTERISTICS T = 0°C to +70°C for Commercial A Symbol Parameter I 1 Vcc Read Supply Current Vcc Write Supply Current CC I Standby Current SB POWER SUPPLY CHARACTERISTICS T = –40°C to +85°C for Industrial A Symbol Parameter I 1 Vcc Read Supply Current ...

Page 7

... IS93C46B AC ELECTRICAL CHARACTERISTICS 0°C to +70°C for Commercial, –40°C to +85°C for Industrial A A Symbol Parameter f SK Clock Frequency HIGH Time SKH t SK LOW Time SKL t Minimum CS LOW Time Setup Time CSS t Din Setup Time DIS t CS Hold Time ...

Page 8

... IS93C46B AC ELECTRICAL CHARACTERISTICS T = –40°C to +125°C for Automotive A Symbol Parameter f SK Clock Frequency HIGH Time SKH t SK LOW Time SKL t Minimum CS LOW Time Setup Time CSS t Din Setup Time DIS t CS Hold Time CSH t Din Hold Time DIH t Output Delay to “ ...

Page 9

... IS93C46B AC WAVEFORMS FIGURE 2. SYNCHRONOUS DATA TIMING CS t CSS SK t DIS OUT (READ) D OUT (WRITE) (WRALL) (ERASE) (ERAL) FIGURE 3. READ CYCLE TIMING OUT * Address Pointer Cycles to the Next Register Notes: To determine address bits An-A0 and data bits Dm-Do, see Instruction Set. ...

Page 10

... IS93C46B AC WAVEFORMS FIGURE 4. WRITE ENABLE (WEN) TIMING 3-state OUT FIGURE 5. WRITE (WRITE) CYCLE TIMING OUT Notes: 1. After the completion of the instruction (D indicates BUSY status) then attempting to perform another instruction could cause device malfunction. (D OUT 2. To determine address bits A ...

Page 11

... IS93C46B AC WAVEFORMS FIGURE 6. WRITE ALL (WRALL) TIMING OUT Notes: 1. After the completion of the instruction (D indicates BUSY status) then attempting to perform another instruction could cause device malfunction. (D OUT 2. To determine data bits see Instruction Set FIGURE 7. WRITE DISABLE (WDS) CYCLE TIMING ...

Page 12

... IS93C46B AC WAVEFORMS FIGURE 8. ERASE (REGISTER ERASE) CYCLE TIMING OUT Notes: To determine data bits An - A0, see Instruction Set. FIGURE 9. ERASE ALL (ERAL) CYCLE TIMING OUT Note for Figures 8 and 9: After the completion of the instruction (D indicates BUSY status) then attempting to perform another instruction could cause device malfunction. ...

Page 13

... SOIC JEDEC IS93C46B-3Z 169-mil TSSOP Order Part No IS93C46B-3PI 300-mil Plastic DIP IS93C46B-3GI SOIC (rotated) JEDEC IS93C46B-3GRI SOIC JEDEC IS93C46B-3ZI 169-mil TSSOP Order Part No IS93C46B-3PA 300-mil Plastic DIP IS93C46B-3GRA SOIC JEDEC 1-800-379-4774 ISSI ® 13 ...

Related keywords