IS41C16100 ISSI [Integrated Silicon Solution, Inc], IS41C16100 Datasheet - Page 6

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IS41C16100

Manufacturer Part Number
IS41C16100
Description
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
Manufacturer
ISSI [Integrated Silicon Solution, Inc]
Datasheet

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IS41C16100
IS41LV16100
ELECTRICAL CHARACTERISTICS
(Recommended Operating Conditions unless otherwise noted.)
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
6
Symbol
I
I
V
V
I
I
I
I
I
I
operation is assured. The eight RAS cycles wake-up should be repeated any time the t
IL
IO
CC
CC
CC
CC
CC
CC
OH
OL
1
2
3
4
5
6
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage Level
Output Low Voltage Level
Standby Current: TTL
Standby Current: CMOS
Operating Current:
Random Read/Write
Average Power Supply Current
Operating Current:
EDO Page Mode
Average Power Supply Current
Refresh Current:
RAS-Only
Average Power Supply Current
Refresh Current:
CBR
Average Power Supply Current
(2,3,5)
(2,3)
(2,3,4)
(2,3,4)
Integrated Silicon Solution, Inc. — www.issi.com —
(1)
Test Condition
Any input 0V
Other inputs not under test = 0V
Output is disabled (Hi-Z)
0V
I
I
I
I
RAS, LCAS, UCAS
RAS, LCAS, UCAS
RAS, LCAS, UCAS,
Address Cycling, t
RAS = V
Cycling t
RAS Cycling, LCAS, UCAS
t
RAS, LCAS, UCAS Cycling
t
OH
OH
OL
OL
RC
RC
= 4.2 mA (5V)
= 2.0 mA (3.3V)
= t
= t
= –5.0 mA (5V)
= –2.0 mA (3.3V)
V
RC
RC
OUT
IL
(min.)
(min.)
PC
, LCAS, UCAS,
= t
Vcc
PC
V
IN
(min.)
RC
Vcc
= t
V
V
IH
CC
RC
– 0.2V
Commerical
(min.)
V
Industrial
IH
REF
refresh requirement is exceeded.
Speed
3.3V
3.3V
3.3V
-50
-60
-50
-60
-50
-60
-50
-60
5V
5V
5V
Min.
2.4
–5
–5
ISSI
Max.
1-800-379-4774
160
145
160
145
160
145
0.4
80
90
5
5
3
3
4
4
2
2
Unit
04/16/03
mA
mA
mA
mA
mA
mA
mA
R e v . I
µA
µA
V
V
®

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