W39V040FBP WINBOND [Winbond], W39V040FBP Datasheet - Page 20

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W39V040FBP

Manufacturer Part Number
W39V040FBP
Description
512K X 8 CMOS FLASH MEMORY WITH FWH INTERFACE
Manufacturer
WINBOND [Winbond]
Datasheet

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Programmer Interface Mode AC Characteristics, continued
10.7 Read Cycle Timing Parameters
(V
10.8 Write Cycle Timing Parameters
Notes: 1. All AC timing signals observe the following guidelines for determining setup and hold times:
10.9 Data Polling and Toggle Bit Timing Parameters
Output Hold from Address Change
Reset Time
Address Setup Time
Address Hold Time
R/#C to Write Enable High Time
#WE Pulse Width
#WE High Width
Data Setup Time
Data Hold Time
#OE Hold Time
Byte programming Time
Sector Erase Cycle Time
Program/Erase Valid to RY/#BY Delay
Read Cycle Time
Row / Column Address Set Up Time
Row / Column Address Hold Time
Address Access Time
Output Enable Access Time
#OE Low to Active Output
#OE High to High-Z Output
#OE to Data Polling Output Delay
#OE to Toggle Bit Output Delay
Toggle or Polling interval
DD
= 3.3V
2. Exclude 00H pre-program prior to erasure. (In the pre-programming step of the embedded erase algorithm,
all bytes are programmed to 00H before erasure
(a) High level signal's reference level is input high and (b) low level signal's reference level is input low.
Ref. to the AC testing condition.
0.3V, V
PARAMETER
PARAMETER
PARAMETER
SS
= 0V, T
A
= 0 to 70 C)
(Note 2)
SYMBOL
SYMBOL
SYMBOL
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
RC
AS
AH
AA
OE
OLZ
OHZ
OH
- 20 -
OEP
RST
AS
AH
CWH
WP
WPH
DS
DH
OEH
BP
PEC
BUSY
OET
-
MIN.
100
100
50
50
50
50
50
90
MIN.
1
0
350
-
-
MIN.
50
50
0
0
50
-
-
-
-
-
W39V040FB
W39V040FB
TYP.
0.6
12
-
-
-
-
-
-
-
-
-
-
MAX.
150
75
35
MAX.
350
350
-
-
-
-
-
W39V040FB
-
MAX.
200
6
-
-
-
-
-
-
-
-
-
-
UNIT
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
mS
UNIT
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
nS
S
S
S

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