STM8S207C6T3 STMICROELECTRONICS [STMicroelectronics], STM8S207C6T3 Datasheet - Page 66

• Manufacturer Part Number: STM8S207C6T3
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

g
Electrical characteristics
Table 32.
1. C is approximately equivalent to 2 x crystal Cload.
2. The oscillator selection can be optimized in terms of supply current using a high quality resonator with small R
3. Data based on characterization results, not tested in production.
4.
Figure 17. HSE oscillator circuit diagram
HSE oscillator critical g
R
L
C
Co: Shunt capacitance (see crystal specification)
C
g
66/103
t
mcrit
m
m
SU(HSE)
m
m
L1
Symbol
I
DD(HSE)
: Notional inductance (see crystal specification)
Refer to crystal manufacturer for more details
reached. This value is measured for a standard crystal resonator and it can vary significantly with the crystal manufacturer.
: Notional resistance (see crystal specification)
: Notional capacitance (see crystal specification)
f
>> g
C
t
=C
HSE
R
g
SU(HSE)
(1)
m
F
=
R
L
C
L2
m
m
m
mcrit
(4)
(
Resonator
=C: Grounded external capacitance
2
×
is the start-up time measured from the moment it is enabled (by software) to a stabilized 24 MHz oscillation is
C
External high speed oscillator
frequency
Feedback resistor
Recommended load capacitance
HSE oscillator power consumption
Oscillator transconductance
Startup time
Π
O
HSE oscillator characteristics
×
f
HSE
)
2
Parameter
×
R
m
m
formula
(
2Co
C
C
L1
L2
+
C
)
2
Resonator
(2)
Doc ID 14733 Rev 9
V
OSCIN
OSCOUT
f
f
OSC
OSC
DD
Conditions
C = 20 pF,
C = 10 pF,
is stabilized
= 24 MHz
= 24 MHz
Min
1
5
R
g
F
m
Typ
220
STM8S207xx, STM8S208xx
1
Consumption
control
f
1.5 (stabilized)
HSE
2 (stabilized)
6 (startup)
6 (startup)
to core
Max
24
20
m
value.
(3)
STM8
(3)
mA/V
MHz
Unit
mA
ms
kΩ
pF