STM8S207C6T3 STMICROELECTRONICS [STMicroelectronics], STM8S207C6T3 Datasheet - Page 69

• Manufacturer Part Number: STM8S207C6T3
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STM8S207xx, STM8S208xx
10.3.5
Memory characteristics
RAM and hardware registers
Table 35.
1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware
2. Refer to
Flash program memory/data EEPROM memory
General conditions: T
Table 36.
1. Data based on characterization results, not tested in production.
2. The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes even when a
Symbol
t
N
V
t
t
erase
Symbol
I
prog
RET
registers (only in halt mode). Guaranteed by design, not tested in production.
write/erase operation addresses a single byte.
DD
RW
DD
V
RM
Operating voltage
(all modes, execution/write/erase)
Standard programming time
(including erase) for byte/word/block
(1 byte/4 bytes/128 bytes)
Fast programming time for 1 block
(128 bytes)
Erase time for 1 block (128 bytes)
Erase/write cycles
(program memory)
Erase/write cycles (data memory)
Data retention (program memory)
after 10 k erase/write cycles at
T
Data retention (data memory) after 10
k erase/write cycles at T
Data retention (data memory) after
300k erase/write cycles at
T
Supply current (Flash programming or
erasing for 1 to 128 bytes)
Table 19 on page 57
A
A
= 85 °C
= 125 °C
RAM and hardware registers
Flash program memory/data EEPROM memory
Data retention mode
A
Parameter
= -40 to 125 °C.
Parameter
(2)
for the value of V
Doc ID 14733 Rev 9
A
= 85 °C
(1)
(2)
IT-max
.
f
CPU
T
T
T
T
Halt mode (or reset)
Conditions
T
RET
RET
RET
A
A
= 125 ° C
= 85 °C
≤
Conditions
= 55° C
= 55° C
= 85° C
24 MHz
Min
Electrical characteristics
300 k
2.95
10 k
20
20
1
(1)
Typ
V
1M
6
3
3
2
IT-max
Min
(2)
Max
5.5
6.6
3.3
3.3
Unit
cycles
69/103
years
V
Unit
mA
ms
ms
ms
V