HIP2060AS2 INTERSIL [Intersil Corporation], HIP2060AS2 Datasheet - Page 2
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HIP2060AS2
Manufacturer Part Number
HIP2060AS2
Description
60V, 10A Half Bridge Power MOSFET Array
Manufacturer
INTERSIL [Intersil Corporation]
Available stocks
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Part Number
Manufacturer
Quantity
Price
Absolute Maximum Ratings
Continuous Drain-Source Voltage Over Operating Junction and Case Temperature Range. . . . . . V
Drain-Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Source-Drain Diode Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Pulsed Drain Current, each Output, all Outputs on (Notes 1, 2) . . . . . . . . . . . . . . . . . . . . . . . I
Continuous Drain Current, each Output, all Outputs on (Note 2) . . . . . . . . . . . . . . . . . . . . . . . .I
Single Pulse Avalanche Energy (Note 3) Refer to UIS Curve . . . . . . . . . . . . . . . . . . . . . . . . . E
Continuous Power Dissipation at T
Continuous Power Dissipation, Derate above T
Thermal Information
Operating Case Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Junction and Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Lead Temperature (For Soldering, 10s)(Lead Tips Only). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Continuous Drain1-Source2 Voltage Over Operating Junction Temperature Range. . . . . . V
NOTES:
Electrical Specifications
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain1-Source2 Breakdown Voltage
(Across D1)
Zero Gate Voltage Drain Current
Drain1-Source2 Current (Through D1)
Drain-Source On-State Voltage
(Note 4)
Forward Gate Current, Drain Short
Circuited to Source
Reverse Gate Current, Drain Short
Circuited to Source
Drain-Source On Resistance (Note 4)
Forward Transconductance (Note 4)
1. Pulse width limited by maximum junction temperature.
2. Drain current limited by package construction.
3. V
DD
= 25V, Start T
PARAMETER
J
= 25
o
C, L = 1.5mH, R
C
T
= 25
C
T
= 25
C
o
= 25
C (Infinite Heatsink). . . . . . . . . . . . . . . . . . . . . . . . . P
o
SYMBOL
C, Unless Otherwise Specified
V
V
BV
r
BV
I
DS(ON)
I
GS(TH)
I
DS(ON)
o
GSSF
GSSR
I
D1S2
C
GS
DSS
C, Unless Otherwise Specified
g
D1S2
DSS
fs
= 25
= 50 , R = 0. See Figures 2, 12, and 13.
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
V
I
V
V
V
V
V
I
I
V
V
V
V
V
V
V
D
D1S2
D
D
GS
GS
G1S1
G1S1,
DS
D1S2
DS
DS
GS
GS
GS
GS
DS
= 100 A, V
= 10A, V
= 10A, V
= 60V
= 0V, V
= 0V, V
= 15V, I
= V
= 0V
= 15V, I
= 15V, I
= 10V, I
= 10V, I
HIP2060
= 1 A,
= 60V
= 0V, V
V
DS
G2S2
TEST CONDITIONS
, I
GS
GS
2
GS
GS
D
D
D
D
D
D
GS
G2S2
= 15V
= 10V
= 10A
= 10A
= 10A
= 10A
= 5A
= 0V
= 250 A
= 20V
= -20V
= 0V
= 0V
T
125
T
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
C
= -40
= 25
= 25
= 25
= 25
= 125
= 25
= 125
= 25
= 125
o
J
C
, T
D1S2
DGR
o
o
o
o
o
o
STG
o
C
C
C
C
o
C
o
C
o
DM
GS
DS
SD
DS
AS
C to
JA
C
C
C
D
C
L
MIN
1.5
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-40 to 125
-40 to 150
HIP2060
0.37
100
300
60
60
10
25
10
46
60
60
20
TYP
0.09
105
0.15
0.11
0.19
2.3
0.3
0.9
1.1
4.5
70
1
-
-
-
-
0.135
MAX
-100
0.21
0.25
1.25
100
0.15
2.7
1.5
1
1
-
-
-
-
-
UNITS
W/
o
mJ
C/W
o
o
o
UNITS
W
V
V
V
A
A
A
V
C
C
C
o
nA
nA
C
V
V
V
V
V
V
S
A
A
A