HIP2060AS2 INTERSIL [Intersil Corporation], HIP2060AS2 Datasheet - Page 3

• Manufacturer Part Number: HIP2060AS2
• Description: 60V, 10A Half Bridge Power MOSFET Array
• Manufacturer: INTERSIL [Intersil Corporation]

Electrical Specifications
Source-Drain Diode Specifications
NOTES:
Turn-On Delay Time (Note 5)
Rise Time (Note 5)
Turn-Off Delay Time (Note 5)
Fall Time (Note 5)
Total Gate Charge (Note 5)
Gate-Source Charge (Note 5)
Gate-Drain Charge (Note 5)
Short-Circuit Input Capacitance,
Common Source
Short-Circuit Output Capacitance,
Common Source for Upper FET
Short Circuit Output Capacitance
Common Source for Lower FET
Short-Circuit Reverse Transfer
Capacitance, Common Source
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SOURCE-TO-DRAIN DIODE SPECIFICATIONS (Across Z1 and Z2)
Forward Voltage (Note 4)
Reverse Recovery Time (Across Z1)
Reverse Recovery Time (Across Z2)
SOURCE2-TO-DRAIN1 DIODE SPECIFICATIONS D (Across D1)
Forward Voltage (Note 4)
Reverse Recovery Time
DEVICE MATCHING
Drain-Source On Resistance Match
4. Pulse test: Pulse Width
5. Independent of operating temperature.
PARAMETER
PARAMETER
300 s, Duty Cycle
T
C
= 25
o
SYMBOL
SYMBOL
r
C
t
t
C, Unless Otherwise Specified (Continued)
C
Q
DS(ON)M
rr(S1-D1)
rr(S2-D2)
t
t
d(OFF)
OSS(U)
C
d(ON)
C
OSS(L)
R
R
g(TOT)
Q
Q
V
V
RSS
ISS
t
t
t
SD
SD
gd
gs
rr
r
f
JC
JA
2%.
V
I
See Figure 14
V
See Figures 16 and 17
D
V
DD
DS
I
I
I
I
I
V
DS
SD
SD
SD
SD
SD
= 10A, V
GS
= 50V, V
= 30V, R
= 25V, V
HIP2060
= 10A, V
= 10A, dI
= 10A, dI
= 10A, V
= 10A, dI
= 10V, I
TEST CONDITIONS
TEST CONDITIONS
GS
3
GS
L
GS
GS
GS
D
= 10V, R
SD
SD
SD
= 3
= 10A, T
= 10V, I
= 0V, f = 1MHz
/dt = 100A/ s
/dt = 100A/ s
/dt = 100A/ s
= 0V
= 0V
G
D
C
= 50
= 10A
= 25
o
C
MIN
-
MIN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
1.05
200
8.5
TYP
10.5
50
75
90
230
150
225
1.4
4.9
12
40
4
5
6
-
-
MAX
MAX
1.25
12.0
9.5
2.0
2.7
5.5
60
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
o
o
C/W
C/W
ns
ns
ns
nC
nC
nC
%
pF
pF
pF
pF
ns
ns
ns
ns
V
V