SI9936BDY_07 VISHAY [Vishay Siliconix], SI9936BDY_07 Datasheet

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SI9936BDY_07

Manufacturer Part Number
SI9936BDY_07
Description
Dual N-Channel 30-V (D-S) MOSFET
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
Notes
a.
Document Number: 72521
S-32411—Rev. B, 24-Nov-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Ordering Information: Si9936BDY—E3
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
ti
G
G
S
S
1
1
2
2
t A bi
1
2
3
4
Si9936BDY-T1—E3 (with Tape and Reel)
J
J
a
a
0.052 @ V
0.035 @ V
= 150_C)
= 150_C)
t
a
a
Top View
Parameter
Parameter
SO-8
r
DS(on)
Dual N-Channel 30-V (D-S) MOSFET
a
a
GS
GS
(W)
= 4.5 V
= 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
New Product
I
= 25_C
= 70_C
= 25_C
= 70_C
D
6.0
4.9
(A)
G
1
Symbol
Symbol
N-Channel MOSFET
T
R
R
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
D
S
1
1
10 secs
Typical
6.0
4.8
1.7
2.0
1.3
53
92
30
−55 to 150
G
"20
30
40
2
Steady State
N-Channel MOSFET
Maximum
Vishay Siliconix
62.5
110
4.5
3.6
0.9
1.1
0.7
40
D
S
Si9936BDY
2
2
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI9936BDY_07 Summary of contents

Page 1

Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY V (V) r (W) DS DS(on) 0.035 @ 0.052 @ ...

Page 2

Si9936BDY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance ...

Page 3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 0. 0.04 V 0.02 0. − Drain Current (A) D Gate Charge ...

Page 4

Si9936BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 ...

Page 5

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Document Number: 72521 S-32411—Rev. B, 24-Nov-03 New Product −2 − ...

Page 6

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