HIP6601_04 INTERSIL [Intersil Corporation], HIP6601_04 Datasheet

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HIP6601_04

Manufacturer Part Number
HIP6601_04
Description
Synchronous-Rectified Buck MOSFET Drivers
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
Synchronous-Rectified Buck MOSFET
Drivers
The HIP6601 and HIP6603 are high frequency, dual
MOSFET drivers specifically designed to drive two power
N-Channel MOSFETs in a synchronous-rectified buck
converter topology. These drivers combined with a HIP630x
Multi-Phase Buck PWM controller and Intersil UltraFETs™
form a complete core-voltage regulator solution for
advanced microprocessors.
The HIP6601 drives the lower gate in a synchronous-rectifier
bridge to 12V, while the upper gate can be independently
driven over a range from 5V to 12V. The HIP6603 drives
both upper and lower gates over a range of 5V to 12V. This
drive-voltage flexibility provides the advantage of optimizing
applications involving trade-offs between switching losses
and conduction losses.
The output drivers in the HIP6601 and HIP6603 have the
capacity to efficiently switch power MOSFETs at frequencies
up to 2MHz. Each driver is capable of driving a 3000pF load
with a 30ns propagation delay and 50ns transition time. Both
products implement bootstrapping on the upper gate with
only an external capacitor required. This reduces
implementation complexity and allows the use of higher
performance, cost effective, N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
Ordering Information
Block Diagram
HIP6601CB
HIP6603CB
PART NUMBER
PVCC
PWM
VCC
TEMP. RANGE
0 to 85
0 to 85
+5V
(
o
C)
10K
10K
1
CONTROL
LOGIC
8 Ld SOIC
8 Ld SOIC
Data Sheet
PACKAGE
M8.15
M8.15
PKG. NO.
PROTECTION
THROUGH
SHOOT-
1-888-INTERSIL or 321-724-7143
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Drives Two N-Channel MOSFETs
• Adaptive Shoot-Through Protection
• Internal Bootstrap Device
• Supports High Switching Frequency
• Small 8 Lead SOIC Package
• Dual Gate-Drive Voltages for Optimal Efficiency
• Three-State Input for Bridge Shutdown
• Supply Under Voltage Protection
Applications
• Core Voltage Supplies for Intel Pentium® III, AMD®
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Pinout
- Fast Output Rise Time
- Propagation Delay 30ns
Athlon™ Microprocessors
All other trademarks mentioned are the property of their respective owners.
August 2004
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
UGATE
BOOT
BOOT
UGATE
PHASE
LGATE
GND
PWM
Copyright Intersil Americas Inc. 2000, 2004. All Rights Reserved
GND
HIP6601CB/HIP6603CB
1
2
3
4
HIP6601, HIP6603
TOP VIEW
(SOIC)
VCC FOR HIP6601
PVCC FOR HIP6603
8
7
6
5
PHASE
PVCC
VCC
LGATE
FN4819.1

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HIP6601_04 Summary of contents

Page 1

Data Sheet Synchronous-Rectified Buck MOSFET Drivers The HIP6601 and HIP6603 are high frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with a HIP630x Multi-Phase Buck PWM controller ...

Page 2

Typical Application +5V VFB COMP VCC PWM1 VSEN PWM2 PWM3 PGOOD MAIN CONTROL HIP6301 VID ISEN1 ISEN2 FS ISEN3 GND 2 HIP6601, HIP6603 +12V +5V BOOT PVCC UGATE VCC PHASE DRIVE PWM HIP6601 LGATE +12V +5V BOOT PVCC UGATE VCC ...

Page 3

Absolute Maximum Ratings Supply Voltage (VCC .15V Supply ...

Page 4

Functional Pin Description UGATE (Pin 1) Upper gate drive output. Connect to gate of high-side power N-Channel MOSFET. BOOT (Pin 2) Floating bootstrap supply pin for the upper gate drive. Connect the bootstrap capacitor between this pin and the PHASE ...

Page 5

A falling transition on PWM indicates the turn-off of the upper MOSFET and the turn-on of the lower MOSFET. A short propagation delay [TPDL ] is encountered before the UGATE upper gate begins to fall [TF ]. Again, the adaptive ...

Page 6

MOSFETs. The power dissipated by the driver is approximated as:   1.05f  ...

Page 7

Since both upper and lower gate capacitance can vary, Figure 7 shows dissipation curves versus lower gate capacitance with upper gate capacitance held constant at three different values. These curves apply only to the HIP6601 due to power supply configuration. ...

Page 8

Small Outline Plastic Packages (SOIC) N INDEX 0.25(0.010) H AREA E - SEATING PLANE - -C- α µ 0.10(0.004) 0.25(0.010 NOTES: 1. Symbols are defined in ...

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