HIP6601_04 INTERSIL [Intersil Corporation], HIP6601_04 Datasheet - Page 4
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HIP6601_04
Manufacturer Part Number
HIP6601_04
Description
Synchronous-Rectified Buck MOSFET Drivers
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet
1.HIP6601_04.pdf
(8 pages)
Functional Pin Description
UGATE (Pin 1)
Upper gate drive output. Connect to gate of high-side power
N-Channel MOSFET.
BOOT (Pin 2)
Floating bootstrap supply pin for the upper gate drive.
Connect the bootstrap capacitor between this pin and the
PHASE pin. The bootstrap capacitor provides the charge to
turn on the upper MOSFET. A resistor in series with boot
capacitor is required in certain applications to reduce ringing
on the BOOT pin. See the Internal Bootstrap Device section
under DESCRIPTION for guidance in choosing the
appropriate capacitor and resistor values.
PWM (Pin 3)
The PWM signal is the control input for the driver. The PWM
signal can enter three distinct states during operation, see the
three-state PWM Input section under DESCRIPTION for further
details. Connect this pin to the PWM output of the controller.
GND (Pin 4)
Bias and reference ground. All signals are referenced to this
node.
LGATE (Pin 5)
Lower gate drive output. Connect to gate of the low-side
power N-Channel MOSFET.
VCC (Pin 6)
Connect this pin to a +12V bias supply. Place a high quality
bypass capacitor from this pin to GND.
Timing Diagram
TPDL
UGATE
LGATE
PWM
LGATE
TPDH
UGATE
4
TF
LGATE
TR
UGATE
HIP6601, HIP6603
TPDL
PVCC (Pin 7)
For the HIP6601, this pin supplies the upper gate drive bias.
Connect this pin from +12V down to +5V.
For the HIP6603, this pin supplies both the upper and lower
gate drive bias. Connect this pin to either +12V or +5V.
PHASE (Pin 8)
Connect this pin to the source of the upper MOSFET and the
drain of the lower MOSFET. The PHASE voltage is
monitored for adaptive shoot-through protection. This pin
also provides a return path for the upper gate drive.
Description
Operation
Designed for versatility and speed, the HIP6601 and HIP6603
dual MOSFET drivers control both high-side and low-side N-
Channel FETs from one externally provided PWM signal.
The upper and lower gates are held low until the driver is
initialized. Once the VCC voltage surpasses the VCC Rising
Threshold (See Electrical Specifications), the PWM signal
takes control of gate transitions. A rising edge on PWM
initiates the turn-off of the lower MOSFET (see Timing
Diagram). After a short propagation delay [TPDL
lower gate begins to fall. Typical fall times [TF
provided in the Electrical Specifications section. Adaptive
shoot-through circuitry monitors the LGATE voltage and
determines the upper gate delay time [TPDH
on how quickly the LGATE voltage drops below 1.0V. This
prevents both the lower and upper MOSFETs from
conducting simultaneously or shoot-through. Once this delay
period is complete the upper gate drive begins to rise
[TR
UGATE
UGATE
] and the upper MOSFET turns on.
TPDH
LGATE
TF
UGATE
TR
LGATE
UGATE
LGATE
LGATE
] based
] are
], the