VNQ830M_04 STMICROELECTRONICS [STMicroelectronics], VNQ830M_04 Datasheet - Page 9

• Manufacturer Part Number: VNQ830M_04
• Description: QUAD CHANNEL HIGH SIDE DRIVER
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

APPLICATION SCHEMATIC
GND
REVERSE BATTERY
Solution 1: Resistor in the ground line (R
can be used with any type of load.
The following is an indication on how to dimension the
R
where -I
be found in the absolute maximum rating section of the
device’s datasheet.
Power Dissipation in R
battery situations) is:
GND
1) R
2) R
Note: Channels 3 & 4 have the same internal circuit as channel 1 & 2.
resistor.
GND
GND
GND
PROTECTION
+5V
C
600mV / 2(I
is the DC reverse ground pin current and can
V
CC
) / (-I
R
R
R
R
R
R
R
R
prot
prot
prot
prot
prot
prot
prot
GND
prot
GND
S(on)max
+5V
+5V
)
(when V
NETWORK
+5V
+5V
).
CC
STATUS1
INPUT1
STATUS2
INPUT2
STATUS3
INPUT3
STATUS4
INPUT4
<0: during reverse
GND
AGAINST
only). This
V
CC1,2
V
GND1,2
GND
P
This resistor can be shared amongst several different
HSD. Please note that the value of this resistor should be
calculated with formula (1) where I
sum of the maximum on-state currents of the different
devices.
Please note that if the microprocessor ground is not
common with the device ground then the R
produce a shift (I
and the status output values. This shift will vary
depending on how many devices are ON in the case of
several high side drivers sharing the same R
If the calculated power dissipation leads to a large resistor
or several devices have to share the same resistor then
the ST suggests to utilize Solution 2.
D
R
= (-V
GND
V
CC
CC3,4
GND3,4
)
2
/R
GND
D
OUTPUT4
OUTPUT2
GND
OUTPUT3
OUTPUT1
S(on)max
* R
GND
) in the input thresholds
S(on)max
VNQ830M
becomes the
GND
.
GND
D
ld
9/21
will