VNQ830M STMicroelectronics, VNQ830M Datasheet
VNQ830M
Specifications of VNQ830M
Available stocks
Related parts for VNQ830M
VNQ830M Summary of contents
Page 1
... Quad channel high side driver V CC 36V Description The VNQ830M is a quad HSD formed by assembling two VND830M chips in the same SO- 28 package. The VND830M is a monolithic device made Technology. The VNQ830M is intended for driving any type of multiple load with one side connected (a) to ground ...
Page 2
... Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 4.1 SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 5.1 ECOPACK 5.2 SO-28 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 2/28 Solution 1: a resistor in the ground line (RGND only Solution 2: a diode ( the ground line . . . . . . . . . . . . . . . . . . . . 19 GND ® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 = 13.5V VNQ830M ...
Page 3
... VNQ830M List of tables Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6 Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Table 4. Thermal data (per island Table 5. Power output Table 6. Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Table output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 CC Table 8. Switching (V = 13V 25° Table 9. Logic inputs Table 10. ...
Page 4
... Rthj-amb Vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 23 Figure 29. Thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Figure 30. Thermal fitting model of a quad channel HSD in SO- Figure 31. SO-28 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Figure 32. SO-28 tube shipment (no suffix Figure 33. SO-28 tape and reel shipment (suffix “TR” 4/28 VNQ830M ...
Page 5
... VNQ830M 1 Block diagram and pin description Figure 1. Block diagram GND1,2 INPUT1 STATUS1 OVERTEMP. 1 INPUT2 STATUS2 OVERTEMP. 2 GND3,4 INPUT3 STATUS3 OVERTEMP. 3 INPUT4 STATUS4 OVERTEMP OVERVOLTAGE CLAMP UNDERVOLTAGE CLAMP 1 DRIVER 1 CURRENT LIMITER 1 LOGIC OPENLOAD ON 1 OPENLOAD OFF OVERVOLTAGE CLAMP UNDERVOLTAGE CLAMP 3 DRIVER 3 CURRENT LIMITER 3 ...
Page 6
... To ground 6/ GND 1,2 INPUT1 STATUS1 STATUS2 INPUT2 V 1 3,4 CC GND 3,4 INPUT3 STATUS3 STATUS4 INPUT4 V 3 Status N. VNQ830M V 1,2 CC OUTPUT1 OUTPUT1 OUTPUT1 OUTPUT2 OUTPUT2 OUTPUT2 OUTPUT3 OUTPUT3 OUTPUT3 OUTPUT4 OUTPUT4 OUTPUT4 V 3,4 CC Output Input X X Through 10KΩ resistor ...
Page 7
... VNQ830M 2 Electrical specifications 2.1 Absolute maximum ratings Stressing the device above the rating listed in the “Absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied ...
Page 8
... Cu (at least 35 µm thick) connected (at least 35 µm thick) connected to < 36V; -40°C < T < 150°C, unless j I S1,2 V CC1,2 V (*) F1 I OUT1 OUTPUT1 V OUT1 I OUT2 OUTPUT2 V OUT2 I OUT3 OUTPUT3 V OUT3 I OUT4 OUTPUT4 V OUT4 GND 1,2 I GND3,4 GND1,2 VNQ830M Unit °C/W °C/W °C/W V CC1,2 ...
Page 9
... VNQ830M Table 5. Power output Symbol Parameter Operating supply V CC voltage V Undervoltage shutdown USD V Overvoltage shutdown state resistance ON I Supply current S I Off state output current V L(off1) I Off state output current V L(off2) I Off state output current L(off3) I Off state output current L(off4) Table 6 ...
Page 10
... Figure 10 = 11.7V See OUT Figure 5) Figure 12 Min. Typ. = 1.25V 1 3.25 = 3.25V 0.5 = 1mA 6 6.8 = -1mA - 0.7 Min. Typ STAT = 5V STAT 6 6.8 - 0.7 VNQ830M Max. Unit 0.6 V Max. Unit µs µs V/µs V/µs Max. Unit 1.25 V µ µ Max. Unit 0 µA 100 ...
Page 11
... VNQ830M Table 11. Openload detection Symbol I Openload On state detection threshold OL t Openload On state detection delay DOL(on) Openload Off state voltage detection V OL threshold t Openload detection delay at turn-off DOL(off) Figure 4. Status timings OPEN LOAD STATUS TIMING (with external pull-up) V INn V STATn t DOL(off) Figure 5. ...
Page 12
... Electrical specifications Table 12. Truth table Conditions Normal operation Current limitation Overtemperature Undervoltage Overvoltage Output voltage > V Output current < I 12/28 Input VNQ830M Output Status < TSD X (T > TSD ...
Page 13
... VNQ830M Table 13. Electrical transient requirements ISO T/R 7637/1 Test pulse ISO T/R 7637/1 Test pulse Class All functions of the device are performed as designed after exposure to C disturbance. One or more functions of the device is not performed as designed after exposure E and cannot be returned to proper operation without replacing the device. ...
Page 14
... INPUT n LOAD VOLTAGE STATUS n INPUT n LOAD VOLTAGE STATUS n INPUT n LOAD VOLTAGE STATUS INPUT n LOAD CURRENT STATUS n 14/28 NORMAL OPERATION n UNDERVOLTAGE V USDhyst V USD n undefined OVERVOLTAGE V <V V > OPEN LOAD with external pull- OPEN LOAD without external pull-up n OVERTEMPERATURE T TSD > V OUT OL VNQ830M ...
Page 15
... VNQ830M 2.4 Electrical characteristics curves Figure 7. Off state output current IL(off1) (uA) 2.5 2.25 Off state 2 Vcc= 36V Vin= Vout= 0V 1.75 1.5 1.25 1 0.75 0.5 0.25 0 -50 - (°C ) Figure 9. Input clamp voltage Vicl (V) 8 7.8 I in= 1mA 7.6 7.4 7.2 7 6.8 6.6 6 ...
Page 16
... Tc= 150°C 110 100 Tc= 25° Tc= - 40° out Vcc (V) Vhyst (V) 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -50 - 100 125 150 Tc (°C ) Vil (V) 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 -50 - 100 125 150 Tc (°C ) VNQ830M CC 40 175 175 ...
Page 17
... VNQ830M Figure 19. Status leakage current Ilstat (uA) 0.05 0.04 Vstat= 5V 0.03 0.02 0.01 0 -50 - (°C ) Figure 21. Status clamp voltage Vscl (V) 8 7.8 I stat= 1mA 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 -50 - (°C ) Figure 23. Openload Off state voltage detection threshold Vol (V) 5 4.5 ...
Page 18
... GND ≥ GND 18/28 +5V +5V V CC1,2 R prot STATUS1 R prot INPUT1 R prot STATUS2 R prot INPUT2 R prot STATUS3 R prot INPUT3 R prot STATUS4 R prot INPUT4 GND1,2 V +5V +5V GND GND ) S(on)max ) / ( - GND V CC3,4 OUTPUT1 OUTPUT2 OUTPUT3 OUTPUT4 GND3,4 R GND D GND only) GND resistor: VNQ830M D ld ...
Page 19
... VNQ830M where - I is the DC reverse ground pin current and can be found in the absolute GND maximum rating section of the device datasheet. Power dissipation This resistor can be shared amongst several different HSDs. Please note that the value of this resistor should be calculated with formula (1) where I maximum on-state currents of the different devices ...
Page 20
... Olmin + R ))R < Olmin. PU out V batt DRI VER INP UT + LOGI TATUS ROUND ) connected between PU ) like the +5V line used to supply the has to be higher than OUT < OLmax L(off2) is pulled high (up to several mA), the pull L(off2) OUT R L VNQ830M OUT ...
Page 21
... VNQ830M 3.5 Maximum demagnetization energy (V Figure 26. Maximum turn-off current versus load inductance 100 single pulse repetitive pulse repetitive pulse Note: Values are generated with R In case of repetitive pulses, T must not exceed the temperature specified above for curves B and C. 1 L(mH) = 150º ...
Page 22
... thC dchip2 amb thB dchip1 dchip2 T T amb ( thA dchip1 thC dchip2 amb jchip2 thC dchip1 amb thA dchip2 amb thB dchip1 dchip2 P dchip1 amb thA dchip2 thC P dchip1 + T dchip1 amb = P dchip1 VNQ830M ). Note = P dchip2 ≠ P dchip2 dchip2 ...
Page 23
... VNQ830M Figure 28. R thj-amb RTHj_amb (° Figure 29. Thermal impedance junction ambient single pulse ZT H (° 1000 100 10 1 0.1 0.0001 0.001 Vs PCB copper area in open box free air condition PCB Cu heats ink area (cm^ 2)/ is land 0.01 0 ime (s) Package and PCB thermal data ...
Page 24
... C13 = C15 (W.s/° C14 = C16 (W.s/° (W.s/° C10 (W.s/° C11 (W.s/° C12 (W.s/°C) R17 = R18 (°C/W) 24/ δ – THtp (°C/ R10 (°C/ R11 (°C/ R12 (°C/ Footprint 0.15 0.8 4 0.0006 2.10E-03 6E-03 0.2 1.5 5 150 VNQ830M ...
Page 25
... VNQ830M 5 Package and packing information ® 5.1 ECOPACK In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
Page 26
... All dimensions are in mm. Reel dimensions Base Q.ty 1000 Bulk Q.ty 1000 A (max) 330 B (min) 1.5 C (± -0) 16.4 N (min (max) 22.4 No components Components No components 500mm min Empty components pockets 500mm min saled with cover tape. User direction of feed VNQ830M Start ...
Page 27
... VNQ830M 6 Revision history Table 17. Document revision history Date 09-Sep-2004 03-May-2006 01-Dec-2008 Revision 1 Initial release. Current and voltage convention update (page 3). Configuration diagram (top view) & suggested connections for unused and not connected pins insertion (page 3). 6 cm2 Cu condition insertion in thermal data table (page 4). ...
Page 28
... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 28/28 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com VNQ830M ...