VNQ830M STMicroelectronics, VNQ830M Datasheet - Page 24

IC DRIVER HISIDE QUAD 28-SOIC

VNQ830M

Manufacturer Part Number
VNQ830M
Description
IC DRIVER HISIDE QUAD 28-SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ830M

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
60 mOhm
Current - Peak Output
10.5A
Voltage - Supply
5.5 V ~ 36 V
Mounting Type
Surface Mount
Package / Case
28-SOIC (7.5mm Width)
Supply Current
40 mA
Maximum Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
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VNQ830M-E
Manufacturer:
ST
0
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VNQ830M/E
Manufacturer:
ST
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Manufacturer:
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Package and PCB thermal data
24/28
Equation 1
Figure 30. Thermal fitting model of a quad channel HSD in SO-28
Table 15.
where
Z
THδ
=
δ
R
C1 = C7 = C13 = C15 (W.s/°C)
C2 = C8 = C14 = C16 (W.s/°C)
TH
=
R1 = R7 = R13 = R15 (°C/W)
R2 = R8 = R14 = R16 (°C/W)
:
pulse calculation formula
Thermal parameters
t
P d3
T j _ 1
P d 1
T j _2
T j _4
P d 2
T j _ 3
p
P d 4
δ Z
Area / island (cm
C4 = C10 (W.s/°C)
C5 = C11 (W.s/°C)
C6 = C12 (W.s/°C)
R17 = R18 (°C/W)
C3 = C9 (W.s/°C)
R4 = R10 (°C/W)
R5 = R11 (°C/W)
R6 = R12 (°C/W)
+
T
R3 = R9 (°C/W)
THtp
C 15
C 1
R 1
C 13
R 13
C 7
R 7
R 15
(
1 δ
)
C 1 4
C 16
R 1 4
R 1 6
2
C 2
R 2
C 8
R 8
)
R 1 7
C 3
R 3
C 9
R 9
T _ a m b
R 1 8
C 10
C 4
R 4
R 10
Footprint
2.10E-03
0.0006
6E-03
0.15
150
0.8
4.5
0.2
1.5
11
15
5
5
C 1 1
C 5
R 5
R 1 1
C 1 2
C 6
R 6
R 1 2
VNQ830M
13
6
8

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