HCS132DMSR INTERSIL [Intersil Corporation], HCS132DMSR Datasheet
HCS132DMSR
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HCS132DMSR Summary of contents
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... This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS132MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART TEMPERATURE SCREENING NUMBER RANGE o o HCS132DMSR - +125 C Intersil Class S Equivalent o o HCS132KMSR - +125 C ...
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Absolute Maximum Ratings Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage ...
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TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER SYMBOL Input to Output TPLH VCC = 4.5V TPHL VCC = 4.5V Input Switch Points Vt+ VCC = 4.5V Vt- VCC = 4.5V VH VCC = 4.5V NOTES: 1. All voltages referenced to ...
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TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50 A Output Voltage High VOH VCC = 4.5V and 5.5V, VIH ...
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CONFORMANCE GROUPS METHOD Group E Subgroup 2 5005 NOTE: Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OPEN GROUND STATIC BURN-IN I TEST CONDITIONS (Note ...
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Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method ...
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AC Timing Diagrams and Load Circuit VIH INPUT VS VIL TPLH VOH VS OUTPUT VOL TTLH VOH 80% 20% OUTPUT VOL VT+ VCC VI GND VCC VO GND HYSTERESIS DEFINITION All Intersil semiconductor products are manufactured, assembled and tested under ...
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Die Characteristics DIE DIMENSIONS mils 2.29 x 2.29mm METALLIZATION: Type: AlSi Å Å Metal Thickness: 11k 1k GLASSIVATION: Type: SiO 2 Å Å Thickness: 13k 2.6k WORST CASE CURRENT DENSITY <2 A/cm BOND ...