BA679_10 VISHAY [Vishay Siliconix], BA679_10 Datasheet - Page 2
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BA679_10
Manufacturer Part Number
BA679_10
Description
RF PIN Diodes - Single in MiniMELF SOD-80
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet
1.BA679_10.pdf
(5 pages)
BA679, BA679S
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Diode capacitance
Differential forward resistance
Reverse impedance
Minority carrier lifetime
amb
amb
Figure 2. Differential Forward Resistance vs. Forward Current
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
95 9734
95 9735
Figure 1. Forward Current vs. Forward Voltage
10 000
Parameter
0.01
100
0.1
1000
10
100
1
10
0.001
1
0
T
amb
= 25 °C
0.4
f > 20 MHz
T
j
0.01
V
= 25 °C
I
F
F
- Forward Current (mA)
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
- Forward Voltage (V)
0.8
For technical questions within your region, please contact one of the following:
Scattering Limit
0.1
1.2
f = 100 MHz, I
I
F
f = 100 MHz, V
f = 100 MHz, V
= 10 mA, I
Test condition
1
1.6
I
V
F
R
= 20 mA
= 30 V
R
2.0
F
10
= 10 mA
= 1.5 mA
R
R
= 0
= 0
BA679S
BA679
Part
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f
95 9733
Symbol
- 20
- 40
- 60
- 80
C
V
20
I
z
z
r
DiodesEurope@vishay.com
τ
R
0
F
D
f
r
r
f
0
2
, modulated with 200 kHz, m = 100 % (MHz)
Π
- Circuit with 10 dB Attenuation
Min
20
f
5
9
1
= 100 MHz unmodulated
V
0
= 40 dBmV
40
Typ.
4
Document Number 85529
60
Rev. 1.7, 05-Aug-10
1000
Max
0.5
50
50
80
Unit
mV
nA
pF
kΩ
kΩ
µs
Ω
2