FLC257MH-6 EUDYNA [Eudyna Devices Inc], FLC257MH-6 Datasheet - Page 2

• Manufacturer Part Number: FLC257MH-6
• Description: C-Band Power GaAs FET
• Manufacturer: EUDYNA [Eudyna Devices Inc]

FLC257MH-6
C-Band Power GaAs FET
OUTPUT POWER vs. INPUT POWER
35
33
31
29
27
25
23
POWER DERATING CURVE
16
12
V DS = +10V
I DS ≈ 0.6 I DSS
f = 6.4 GHz
8
4
16 18 20 22 24 26
Case Temperature (°C)
0
Input Power (dBm)
50 100 150 200
P out
η add
29
27
25
23
21
19
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
& IM 3 vs. INPUT POWER
V DS =10V
f 1 = 6.4 GHz
f 2 = 6.41GHz
2-tone Test
12 14 16 18 20
OUTPUT POWER
P out
50
40
30
20
10
2
1000
750
500
250
IM 3
vs. DRAIN-SOURCE VOLTAGE
35
34
33
0
Drain-Source Voltage (V)
f=6.4 GHz
I DS ≈ 0.6 I DSS
2
-10
-20
-30
-40
-50
Drain-Source Voltage (V)
P 1dB & η add vs. V DS
DRAIN CURRENT
8
4
6
V GS =0V
9
-0.5V
8
η add
P 1dB
-1.0V
-1.5V
10
10
-2.0V
50
40
30