BD533_03 STMICROELECTRONICS [STMicroelectronics], BD533_03 Datasheet - Page 2

• Manufacturer Part Number: BD533_03
• Description: COMPLEMENTARY SILICON POWER TRANSISTORS
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

BD533 BD534 BD535 DB536 BD537 BD538
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
For PNP types voltage and current values are negative.
2/4
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
V
Symbol
R
R
CEO(sus)
CE(sat)
V
thj-case
h
I
I
thj-amb
I
CBO
CES
EBO
BE
FE
f
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Collector Cut-off
Current (I
Collector Cut-off
Current (V
Emitter Cut-off Current
(I
Collector-Emitter
Sustaining Voltage
Collector-Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition frequency
(I
C
B
= 0)
= 0)
Parameter
E
BE
= 0)
= 0)
for BD533/534
for BD535/536
for BD537/538
for BD533/534
for BD535/536
for BD537/538
V
I
I
I
I
I
I
I
I
C
C
C
C
C
C
C
C
EB
= 100 mA
= 2 A
= 6 A
= 2 A
= 10 mA
= 500 mA
= 2 A
= 500 mA
= 5 V
case
= 25
Test Conditions
o
C unless otherwise specified)
I
I
V
V
V
V
V
V
V
for BD535/536
for BD537/538
for BD533/534
for BD535/536
for BD537/538
for BD533/534
for BD535/536
for BD537/538
for BD533/534
V
V
V
B
B
V
CE
CB
CB
CB
CE
CE
CE = 80 V
CE
CE
CE
CE
= 0.2 A
= 0.6 A
= 2 V
= 45 V
= 60 V
= 80 V
= 45 V
= 60 V
= 2 V
= 1 V
= 5 V
= 2 V
Max
Max
Min.
45
60
80
20
20
15
40
25
25
15
3
Typ.
0.8
2.5
12
70
Max.
100
100
100
100
100
100
0.8
1.5
1
o
o
Unit
MHz
mA
C/W
C/W
V
V
V
V
V
V
A
A
A
A
A
A