SIHB24N65E VISHAY [Vishay Siliconix], SIHB24N65E Datasheet
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SIHB24N65E
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SIHB24N65E Summary of contents
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... D PAK (TO-263) SiHB24N65E-GE3 = 25 °C, unless otherwise noted) C SYMBOL ° 100 ° 125 °C J for www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix iss ) g LIMIT UNIT V 650 DS ± W/°C ...
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... junction diode ° ° dI/dt = 100 A/μ RRM 2 www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix MAX. UNIT 62 °C/W 0.5 MIN. TYP. MAX. UNIT 650 - - V - 0.72 - V/° ± 100 μ ...
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... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage 3 www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix 100 120 140 160 T , Junction Temperature (° iss MHz ...
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... Fig Temperature vs. Drain-to-Source Voltage 0.01 Pulse Time (s) 4 www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix 50 75 100 125 150 T , Case Temperature (° 100 120 140 160 T , Junction Temperature (° ...
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... Fig Basic Gate Charge Waveform Same type as D.U. Fig Gate Charge Test Circuit + www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix Charge Current regulator 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level devices GS Fig For N-Channel 6 www.vishay.com/doc?91000 SiHB24N65E Vishay Siliconix + + Document Number: 91477 ...
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TO-263AB (HIGH VOLTAGE) (Datum Lead tip MILLIMETERS DIM. MIN. MAX. A 4.06 4.83 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...