2SK3109-ZJ NEC [NEC], 2SK3109-ZJ Datasheet

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2SK3109-ZJ

Manufacturer Part Number
2SK3109-ZJ
Description
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Manufacturer
NEC [NEC]
Datasheet

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Part Number:
2SK3109-ZJ
Manufacturer:
NEC/RENESAS
Quantity:
12 500
Document No. D13332EJ1V0DS00 (1st edition)
Date Published January 2000 NS CP (K)
Printed in Japan
DESCRIPTION
features a low on-state resistance and excellent
switching characteristics, and designed for high voltage
applications such as DC/DC converter.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to source voltage (V
Gate to source voltage (V
Drain current (DC) (T
Drain current (pulse)
Total power dissipation (T
Total power dissipation (T
Channel temperature
Storage temperature
Single avalanche current
Single avalanche energy
Notes 1. PW
The 2SK3109 is N channel MOS FET device that
Gate voltage rating ±30 V
Low on-state resistance
R
Low input capacitance
C
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
DS(on)
iss
= 400 pF TYP. (V
2. Starting T
= 0.4
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
ch
C
Note1
= 25 °C, V
= 25 °C)
DS
Note2
Note2
GS
DS
A
C
GS
= 10 V, V
= 25 °C)
= 25 °C)
= 0 V)
= 10 V, I
= 0 V)
DD
= 100 V, R
GS
1 %
D
N-CHANNEL POWER MOS FET
The mark
= 5.0 A)
= 0 V)
V
V
I
I
P
P
T
T
I
E
D(DC)
D(pulse)
AS
ch
stg
DSS
GSS
T1
T2
AS
A
= 25 °C)
G
INDUSTRIAL USE
= 25
DATA SHEET
shows major revised points.
SWITCHING
55 to +150
, V
MOS FIELD EFFECT TRANSISTOR
200
150
GS
1.5
50
10
35
30
10
30
= 20 V 0 V
ORDERING INFORMATION
PART NUMBER
mJ
°C
°C
W
W
V
V
A
A
A
2SK3109-ZJ
2SK3109-S
2SK3109
©
TO-220AB
2SK3109
PACKAGE
TO-262
TO-263
1998, 2000

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2SK3109-ZJ Summary of contents

Page 1

... Document No. D13332EJ1V0DS00 (1st edition) Date Published January 2000 NS CP (K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3109 2SK3109-S 2SK3109- ° 200 V DSS V 30 ...

Page 2

... F(S- di/ TEST CIRCUIT 2 SWITCHING TIME D.U. PG Duty Cycle 1 % Data Sheet D13332EJ1V0DS00 2SK3109 TYP. MAX. Unit 100 2.5 4.5 V 1.5 S 0.32 0.4 400 pF 110 ...

Page 3

... FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 0.1 0.01 0.01 100 150 1.4 Pulsed 1.2 1.0 0.8 0.6 0.4 0 Data Sheet D13332EJ1V0DS00 2SK3109 Pulsed T = 125 ˚ ˚C 25 ˚C -25 ˚ Gate to Source Voltage - Pulsed = 25 ˚ ˚C 75 ˚C 125 ˚ ...

Page 4

... C iss 10 C oss C rss 1 0.1 100 1000 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 200 di/ 150 100 50 0 100 0 Data Sheet D13332EJ1V0DS00 2SK3109 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed = 0.5 1.0 1.5 2 Source to Drain Voltage - V SD SWITCHING CHARACTERISTICS d(off d(on 100 V DD ...

Page 5

... TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 10 1 0.1 0.01 10 100 1m Data Sheet D13332EJ1V0DS00 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE Case Temperature - ˚C C 1000 R 10m 100m Pulse Width - s 2SK3109 80 100 120 140 160 R = 83.3 ˚C/W th(ch-A) = 2.5 ˚C/W th(ch-C) Single Pulse 100 1000 5 ...

Page 6

... 0.01 0 Inductive Load - 100 100 = 25 ˚ Starting T Data Sheet D13332EJ1V0DS00 2SK3109 SINGLE AVALANCHE ENERGY DERATING FACTOR V = 100 100 125 150 - Starting Channel Temperature - ˚C ch ...

Page 7

... Fin Cut) 4.8 MAX. (10) 1.3±0 1.3±0.2 0.75±0.3 2.54 TYP. 2.8±0.2 EQUIVALENT CIRCUIT 1.3±0.2 Gate Gate Protection Diode 0.5±0.2 Data Sheet D13332EJ1V0DS00 2SK3109 4.8 MAX. 1.3±0.2 4 2.8±0.2 0.5±0.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Drain Body Diode Source 7 ...

Page 8

... The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. 2SK3109 M7 98. 8 ...

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