2SK3109-ZJ NEC [NEC], 2SK3109-ZJ Datasheet - Page 2

• Manufacturer Part Number: 2SK3109-ZJ
• Description: SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
Drain Leakage Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
2
V
PG.
GS
= 20
I
0 V
G
PG
V
50
= 2 mA
Characteristics
DD
I
R
D
D.U.T.
G
= 25
50
I
AS
D.U.T.
BV
DSS
Starting T
V
R
V
DS
DD
L
L
V
ch
DD
I
I
V
| y
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
Symbol
GS(off)
F(S-D)
DS(on)
iss
oss
rss
G
GS
GD
rr
fs
A
|
= 25 °C)
Data Sheet D13332EJ1V0DS00
V
0
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
V
I
I
I
di/dt = 50 A/ s
D
D
F
F
GS
Duty Cycle
DS
GS
DS
DS
GS
DS
GS
DD
GS(on)
DD
GS
G
PG.
= 10 A, V
= 10 A, V
= 5.0 A
= 10 A
= 1 s
TEST CIRCUIT 2 SWITCHING TIME
= 10
= 200 V, V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V
= 0 V
= 100 V
= 160 V
= 10 V
Test Conditions
= 10 V
GS
GS
R
D
D
D
1 %
G
= 1 mA
= 5.0 A
= 0 V
= 0 V
= 5.0 A
GS
DS
D.U.T.
= 0 V
= 0 V
R
V
MIN.
L
DD
2.5
1.5
I
Wave Form
V
Wave Form
D
GS
TYP.
0.32
400
110
250
3.5
1.0
1.0
55
12
34
40
20
18
10
V
I
D
GS
0
0
10 %
10 %
t
d(on)
MAX.
100
4.5
0.4
10
t
90 %
on
t
r
V
2SK3109
I
GS
D
t
d(off)
(on)
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
C
t
off
90 %
90 %
t
10 %
f