2SK3112-S NEC [NEC], 2SK3112-S Datasheet - Page 2

• Manufacturer Part Number: 2SK3112-S
• Description: SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
2
V
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
GS
PG.
= 20 V
I
PG.
G
0 V
Characteristics
V
50
= 2 mA
DD
I
D
R
D.U.T.
G
= 25
50
I
AS
D.U.T.
BV
DSS
Starting T
V
R
V
DS
L
DD
L
V
ch
DD
I
I
V
| y
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
Symbol
GS(off)
F(S-D)
DS(on)
iss
oss
rss
G
GS
GD
rr
fs
A
|
= 25°C)
Data Sheet D13335EJ1V0DS
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 50 A/ s
V
D
F
F
0
DS
GS
DS
DS
GS
DS
GS
DD
GS
DD
GS
G
GS
Duty Cycle
= 25 A, V
= 25 A, V
= 25 A
PG.
= 1 s
= 10
TEST CIRCUIT 2 SWITCHING TIME
= 200 V, V
= 10 V, I
= 10 V, I
= 10 V
= 30 V, V
= 10 V, I
= 0 V
= 100 V , I
= 10 V
= 160 V
= 10 V
Test Conditions
GS
GS
D
D
D
R
= 1 mA
= 13 A
= 0 V
= 0 V
1%
= 13 A
D
G
GS
DS
= 13 A
D.U.T.
= 0 V
= 0 V
R
V
MIN.
DD
2.5
6.0
L
I
Wave Form
V
Wave Form
D
GS
TYP.
1600
430
280
140
110
300
1.0
1.8
76
35
70
60
11
40
V
I
D
GS
0
0
t
10%
10%
d(on)
MAX.
100
110
4.5
10
t
90%
on
t
r
V
2SK3112
I
GS
D
t
d(off)
Unit
m
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A
C
t
off
90%
90%
t
10%
f