2SK3113-Z NEC [NEC], 2SK3113-Z Datasheet - Page 2

• Manufacturer Part Number: 2SK3113-Z
• Description: SWITCHING N-CHANNEL POWER MOSFET
• Manufacturer: NEC [NEC]

ELECTRICAL CHARACTERISTICS (T
2
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
PG.
= 20 → 0 V
CHARACTERISTICS
I
PG.
G
V
50 Ω
= 2 mA
DD
I
D
R
D.U.T.
G
= 25 Ω
50 Ω
I
AS
D.U.T.
BV
DSS
Starting T
V
R
V
DS
DD
L
L
V
ch
DD
SYMBOL
V
R
V
| y
t
t
I
C
Q
Q
I
C
C
GS(off)
DS(on)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
A
t
t
t
oss
GD
fs
iss
rss
GS
rr
r
f
G
rr
= 25°C)
|
Data Sheet D13336EJ3V0DS
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 50 A/
D
F
F
V
0
DS
GS
DS
DS
GS
DS
GS
DD
GS
G
DD
GS
= 2.0 A, V
= 2.0 A, V
GS
= 2.0 A
τ = 1 s
Duty Cycle ≤ 1%
PG.
= 10 Ω, R
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V
= ±30 V, V
= 10 V, I
= 0 V
= 150 V, I
= 10 V
= 450 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
µ
τ
TEST CONDITIONS
GS
GS
µ
D
D
D
L
s
D
R
= 1 mA
= 1.0 A
= 1.0 A
= 10 Ω
GS
DS
= 0 V
= 0 V
= 1.0 A
G
= 0 V
= 0 V
D.U.T.
R
V
L
DD
V
Wave Form
I
Wave Form
D
GS
MIN.
2.5
0.5
V
I
D
GS
0
0
10%
TYP.
10%
t
290
d(on)
3.3
2.4
0.9
0.9
2.0
60
22
5
7
2
9
9
2
t
90%
on
MAX.
t
r
100
±10
3.5
4.4
V
I
D
GS
t
2SK3113
d(off)
t
UNIT
off
90%
µ
µ
pF
pF
pF
nC
nC
nC
µ
ns
ns
ns
ns
µ
90%
Ω
V
S
V
A
A
C
s
t
10%
f