2SK3402-Z NEC [NEC], 2SK3402-Z Datasheet

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2SK3402-Z

Manufacturer Part Number
2SK3402-Z
Description
SWITCHING N-CHANNEL POWER MOSFET
Manufacturer
NEC [NEC]
Datasheet

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Document No.
Date Published
Printed in Japan
ABSOLUTE MAXIMUM RATINGS (T
DESCRIPTION
designed for high current switching applications.
FEATURES
• Low On-State Resistance
• Low C
• Built-in Gate Protection Diode
• TO-251/TO-252 package
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW ≤ 10
The 2SK3402 is N-Channel MOS Field Effect Transistor
R
R
DS(on)1
DS(on)2
2. Starting T
iss
D14473EJ3V1DS00 (3rd edition)
October 2004 NS CP(K)
= 15 mΩ MAX. (V
= 22 mΩ MAX. (V
: C
iss
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
= 3200 pF TYP.
µ
ch
s, Duty cycle ≤ 1%
Note1
C
= 25°C, V
= 25°C)
Note2
Note2
DS
C
A
GS
GS
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
= 10 V, I
= 4.0 V, I
DD
N-CHANNEL POWER MOS FET
= 30 V, R
The mark ★ shows major revised points.
D
D
= 18 A)
= 18 A)
A
= 25°C)
I
D(pulse)
G
V
V
I
D(DC)
P
P
T
E
T
I
GSS
DSS
AS
= 25
stg
AS
DATA SHEET
T1
T2
ch
SWITCHING
Ω,
V
GS
–55 to +150
MOS FIELD EFFECT TRANSISTOR
= 20 → 0 V
±144
±20
±36
150
123
1.0
60
40
35
ORDERING INFORMATION
PART NUMBER
2SK3402-Z
mJ
°C
°C
W
W
2SK3402
V
V
A
A
A
2SK3402
TO-252 (MP-3Z)
TO-251 (MP-3)
PACKAGE
(TO-251)
(TO-252)
1999, 2000

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2SK3402-Z Summary of contents

Page 1

... Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D14473EJ3V1DS00 (3rd edition) Date Published October 2004 NS CP(K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING ★ ORDERING INFORMATION PART NUMBER 2SK3402 2SK3402 25° DSS V ±20 V ...

Page 2

... µ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ µ Duty Cycle ≤ 1% Data Sheet D14473EJ3V1DS 2SK3402 MIN. TYP. MAX. UNIT µ µ ±10 A 1.5 2.0 2 mΩ mΩ 3200 ...

Page 3

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 160 ˚ 100 Single Pulse 10 m 100 100 PW - Pulse Width - s Data Sheet D14473EJ3V1DS 2SK3402 60 80 100 120 140 160 - Case Temperature - ˚ 125˚C/W th(ch- 3.13˚C/W th(ch-C) 1000 3 ...

Page 4

... 100 V - Gate to Source Voltage - V GS GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 2.5 2.0 1.5 1.0 0.5 0 −50 1000 Channel Temperature - ch Data Sheet D14473EJ3V1DS 2SK3402 100 150 ˚C ...

Page 5

... I - Drain Current - A D DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 µ 100 Gate Charge - nC G Data Sheet D14473EJ3V1DS 2SK3402 1.0 1 d(off) t d(on) 10 100 ...

Page 6

... L - Inductive Load - H 6 SINGLE AVALANCHE ENERGY DERATING FACTOR 160 140 120 100 100 Starting T - Starting Channel Temperature - ch Data Sheet D14473EJ3V1DS 2SK3402 Ω → ≤ 125 150 ˚C ...

Page 7

... Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2) TO-252 (MP-3Z) 6.5±0.2 5.0±0 0.9 1.1±0.2 MAX. 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) Data Sheet D14473EJ3V1DS 2SK3402 2.3±0.2 0.5±0.1 0.8 MAX. 0.8 7 ...

Page 8

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK3402 M8E 02. 11-1 ...

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