2SK3424-ZJ NEC [NEC], 2SK3424-ZJ Datasheet

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2SK3424-ZJ

Manufacturer Part Number
2SK3424-ZJ
Description
SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE
Manufacturer
NEC [NEC]
Datasheet
Document No.
Date Published
Printed in Japan
DESCRIPTION
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
ABSOLUTE MAXIMUM RATINGS (T
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (Pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
Note PW
The 2SK3424 is N-Channel MOS FET device that features a
4.5 V drive available
Low on-state resistance
R
Low gate charge
Q
Built-in gate protection diode
Surface mount device available
DS(on)1
G
= 34 nC TYP. (I
D14640EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
= 11.5 m MAX. (V
10 s, Duty Cycle
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
C
D
Note
= 48 A, V
= 25°C)
DS
A
C
GS
= 25°C)
= 25°C)
= 0 V)
= 0 V)
GS
1%
= 10 V, I
DD
= 24 V, V
N-CHANNEL POWER MOS FET
V
V
I
I
P
P
T
T
D(DC)
D(pulse)
ch
stg
D
DSS
GSS
T1
T2
A
The mark
= 24 A)
= 25
GS
INDUSTRIAL USE
= 10 V)
DATA SHEET
°C
)
SWITCHING
55 to +150
shows major revised points.
MOS FIELD EFFECT TRANSISTOR
150
1.5
30
192
50
20
48
°C
°C
W
W
V
V
A
A
ORDERING INFORMATION
PART NUMBER
2SK3424-ZK
2SK3424-ZJ
2SK3424
©
2SK3424
TO-263(MP-25ZK)
TO-263(MP-25ZJ)
TO-220AB
PACKAGE
1999, 2000

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2SK3424-ZJ Summary of contents

Page 1

... Document No. D14640EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP(K) Printed in Japan DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3424-ZK 2SK3424- ° DSS V 20 ...

Page 2

... di/dt = 100 90 90% 10 d(on) r d(off off Data Sheet D14640EJ2V0DS 2SK3424 MIN. TYP. MAX. UNIT 1.5 2 7.7 11.5 m 10.5 17.0 m 1900 pF 580 pF 270 ...

Page 3

... Pulsed 0.1 0.01 150 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 30 Pulsed Pulsed 0.1 20 Data Sheet D14640EJ2V0DS 2SK3424 T = 40˚C ch 25˚C 25˚C 75˚C 125˚C 150˚ Gate to Source Voltage - 150˚C ch 75˚C 25˚C 40˚C 0.1 ...

Page 4

... MHz 100 C iss t d(on oss C rss 1 0.1 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 Data Sheet D14640EJ2V0DS 2SK3424 4 1.5 0 d(off 100 I - Drain Current - ...

Page 5

... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 160 Case Temperature - ˚C C 100 Single Pulse 10 m 100 100 PW - Pulse Width - sec Data Sheet D14640EJ2V0DS 2SK3424 80 100 120 140 160 R = 83.3˚C/W th(ch- 2.5˚C/W th(ch-C) 1000 5 ...

Page 6

... No plating 1.3±0.2 8.4 TYP. 2.54 2.8±0 EQUIVALENT CIRCUIT 1.3±0.2 Gate Gate Protection Diode 0.5±0.2 Data Sheet D14640EJ2V0DS 2SK3424 4.45±0.2 1.3±0.2 4 0.025 to 0.25 0.7±0.15 0.25 3 1.Gate 2.Drain 3.Source 4.Fin (Drain) Drain Body Diode Source ...

Page 7

... Data Sheet D14640EJ2V0DS 2SK3424 7 ...

Page 8

... NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Please check with an NEC sales representative for 2SK3424 The M8E 00. 4 ...

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